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DiodesZetex NPN Bipolar Transistor, 1 A Collector Current, 60 V Collector-Emitter Voltage, 4-Pin SOT-223 BCP5516TA
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.65mm |
| Length | 6.55mm |
| Model | BCP5516TA |
| Width | 7.1mm |
| Mount Type | Surface |
| Series | BCP55 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 25 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 60V |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 150MHz |
Key Features
- This transistor supports a maximum power dissipation of 2 Watts.
- It has a maximum transition frequency of 150 MHz, suitable for high-frequency applications.
- The device operates over a temperature range from -55°C to +150°C.
- It provides a minimum DC current gain (hFE) of 25.
- The transistor is designed for single configuration and surface mounting.
- The pin count is 4, matching the SOT-223 package style.
- The product conforms to automotive standards AEC-Q101, AEC-Q200, and AEC-Q100.
- Its compact dimensions allow for a width of 7.1 mm, height of 1.65 mm, and length of 6.55 mm.
Product Description
DiodesZetex BCP5516TA is a general purpose NPN bipolar transistor designed for amplification and switching applications. Rated for a maximum DC collector current of 1 Ampere and a maximum collector-emitter voltage of 60 Volts, it ensures reliable performance in electronic circuits.
This transistor is packaged in a 4-pin SOT-223 surface mount device, allowing compact PCB assembly and efficient heat management. With a maximum power dissipation of 2 Watts and a transition frequency up to 150 MHz, it supports medium-frequency switching and analog signal amplification.
Operating temperature ranges from -55°C to 150°C enable usage in diverse industrial and automotive environments. Additionally, it complies with automotive quality standards AEC-Q101, AEC-Q200, and AEC-Q100, making it suitable for automotive electronic designs.
The BCP5516TA's pinout features 4 pins, and its physical size measures 7.1 mm in width, 1.65 mm in height, and 6.55 mm in length, optimized for space saving on modern circuit boards.
This transistor delivers a minimum DC current gain (hFE) of 25, providing effective amplification in various circuit topologies. The maximum voltages for collector to base and emitter to base are 60 V and 5 V respectively, ensuring electrical robustness.
Its single transistor configuration supports typical bipolar transistor applications. Made in China, it offers reliable quality and consistent performance.
This component is ideal for use in industrial electronics, automotive systems, telecommunications equipment, and consumer electronic devices requiring reliable switching and amplification components.
Explore our comprehensive range of semiconductor products at EnvMart to enhance your electronic design projects with quality components like the BCP5516TA transistor.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum DC collector current for the BCP5516TA is rated at 1 Ampere.
This model supports a maximum collector-emitter voltage of 60 Volts.
It has a maximum power dissipation of 2 Watts.
The maximum transition frequency of this transistor is 150 MHz, making it suitable for high-frequency applications.
The dimensions of the SOT-223 package are 7.1 mm in width, 1.65 mm in height, and 6.55 mm in length.
It operates over a temperature range from -55°C to +150°C.
The minimum DC current gain (hFE) for the BCP5516TA is 25.
It conforms to automotive standards AEC-Q101, AEC-Q200, and AEC-Q100.
This transistor features a pin count of 4, consistent with the SOT-223 package style.
The BCP5516TA is designed for a single transistor configuration.
The maximum emitter-base voltage (VEBO) for this model is 5 Volts.
This transistor is suitable for use in industrial electronics, automotive systems, telecommunications equipment, and consumer electronic devices requiring reliable switching and amplification.
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