DiodesZetex NPN Bipolar Transistor 1 A 80 V 3-Pin SOT-89 Surface Mount BCX5610TA

The DiodesZetex BCX5610TA is a general-purpose NPN bipolar transistor designed for a wide range of electronic applications requiring reliable switching and amplification. This transistor supports a maximum continuous collector current of 1 ampere and can handle a collector-emitter voltage up to 80 volts, making it suitable for moderate power circuits.

Encased in a 3-pin SOT-89 surface mount package, it provides a compact footprint for modern PCB layouts and automated assembly processes. Its minimum DC current gain (hFE) of 25 ensures effective amplification performance, while the maximum power dissipation rating of 1 watt assists in thermal management in compact spaces.

Engineered for demanding environments, the BCX5610TA operates reliably across a broad temperature range from -55°C to 150°C. The device also features a maximum transition frequency of 150 MHz, enabling high-speed switching applications important in communication and consumer electronics.

This transistor complies with automotive quality standards AEC-Q101, AEC-Q200, and AEC-Q100, enhancing its suitability for vehicular electronics and other robust industrial uses. With physical dimensions of 4.6 x 4.25 x 1.6 mm, it fits into diverse electronic designs requiring surface-mount technology.

Manufactured in China, the BCX5610TA transistor is a new product aimed at providing dependable semiconductor performance in both commercial and industrial electronics. Its compact size and trusted specifications make it a solid choice for engineers and designers working on signal amplification, switching, and low power driver circuits.

This transistor supports a maximum collector current of 1 A. It features a maximum collector-emitter voltage of 80 V. The package type is compact 3-pin SOT-89 suitable for surface mounting. Offers a minimum DC current gain (hFE) of 25 for efficient amplification.

Supports a maximum power dissipation of 1 W. Operates reliably between temperatures of -55°C to 150°C. Maintains a maximum transition frequency of 150 MHz for high-speed applications. Complies with automotive standards AEC-Q101, AEC-Q200, and AEC-Q100.

Physical dimensions: Length 4.6 mm, Width 4.25 mm, Height 1.6 mm. Manufactured in China with new product condition. Explore this transistor and related semiconductor components for electronics design and manufacturing at EnvMart.

Explore more products in our Bipolar Transistors category.