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DiodesZetex 1 A NPN Bipolar Transistor, 80 V Collector-Emitter, 3-Pin SOT-89 Package BCX56TA

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DiodesZetex 1 A NPN Bipolar Transistor, 80 V Collector-Emitter, 3-Pin SOT-89 Package BCX56TA

Name: DiodesZetex 1 A NPN Bipolar Transistor, 80 V Collector-Emitter, 3-Pin SOT-89 Package BCX56TA
Brand: DiodesZetex
SKU: 225893
Price: 0.12 USD
Availability: InStock

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Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1.6mm
Length	4.6mm
Model	BCX56TA
Width	4.25mm
Mount Type	Surface
Series	BCX56
Maximum Operating Temperature	150°C
Package Type	SOT-89
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	80V
Minimum DC Current Gain hFE	25
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	100V
Automotive Standard	AEC-Q200, AEC-Q101, AEC-Q100
Maximum Power Dissipation Pd	1W
Maximum DC Collector Current Idc	1A
Transistor Configuration	Single
Maximum Transition Frequency ft	150MHz
Diodes Inc ZXTN4000ZTA NPN Transistor, 1 A, 60 V, 3-Pin SOT-89Brand	DiodesZetex

Key Features

This transistor has a maximum DC collector current of 1 A.
The maximum collector-emitter voltage rating is 80 volts.
It features a maximum power dissipation of 1 watt.
The transistor offers a minimum DC current gain (hFE) of 25.
The maximum transition frequency is 150 MHz, suitable for high-speed switching.
The device operates safely over a temperature range from -55°C to 150°C.
It has an automotive quality with AEC-Q200, AEC-Q101, and AEC-Q100 certifications.
The package dimensions are 4.6 mm length, 4.25 mm width, and 1.6 mm height.

Product Description

DiodesZetex BCX56TA is a high-performance NPN bipolar transistor designed for electronic component applications requiring reliable amplification and switching. Rated for a maximum DC collector current of 1 A and a maximum collector-emitter voltage of 80 V, it is housed in a compact 3-pin SOT-89 surface-mount package.

This transistor supports a maximum power dissipation of 1 watt, making it well-suited for medium power applications. It operates efficiently with a minimum DC current gain (hFE) of 25 and a maximum transition frequency of 150 MHz, which ensures high-speed performance in switching circuits and amplification tasks.

The operating temperature range from -55°C to 150°C allows usage in harsh environmental conditions, while its compliance with automotive standards AEC-Q200, AEC-Q101, and AEC-Q100 highlights its robustness and reliability for automotive and industrial electronics.

Physical dimensions are optimized for space-constrained designs, measuring 4.6 mm in length, 4.25 mm in width, and 1.6 mm in height. Its transistor configuration is single, with NPN polarity, and it supports a maximum emitter-base voltage of 5 V and collector-base voltage up to 100 V.

Maximum DC collector current: 1 A. Maximum collector-emitter voltage: 80 V. Maximum power dissipation: 1 W. Minimum DC current gain (hFE): 25. Maximum transition frequency: 150 MHz. Operating temperature range: -55°C to 150°C.

Automotive quality standards: AEC-Q200, AEC-Q101, AEC-Q100. Compact 3-pin SOT-89 package. Dimensions (LxWxH): 4.6 x 4.25 x 1.6 mm. Transistor polarity: NPN single configuration.

This transistor is ideal for targeted industrial, automotive, and electronic circuit applications where precision switching and amplification are required. Explore more DiodesZetex semiconductors in EnvMart’s Electronics & Electricals category to find the perfect match for your projects.

Explore more products in our Bipolar Transistors category.