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DiodesZetex NPN Transistor BCX5516TA, 1 A Collector Current, 60 V Collector Emitter Voltage, 3-Pin SOT-89 BCX5516TA
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | BCX5516TA |
| Width | 4.25mm |
| Mount Type | Surface |
| Series | BCX55 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 25 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 60V |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 150MHz |
Key Features
- Supports a maximum DC collector current of 1 ampere.
- Operates with a maximum collector emitter voltage of 60 volts.
- Features a single transistor configuration and NPN polarity.
- Equipped with a 3-pin SOT-89 surface mount package.
- Has a power dissipation rating of 1 watt for reliable thermal performance.
- Minimum DC current gain (hFE) is 25 for amplification efficiency.
- Operates over a temperature range from -55°C up to 150°C.
- Maximum transition frequency of 150 MHz, suitable for high-frequency applications.
Product Description
DiodesZetex BCX5516TA is a general-purpose NPN bipolar transistor designed for medium power applications. It supports up to 1 ampere collector current and withstands collector emitter voltages up to 60 volts, making it suitable for switching and amplification tasks in industrial, automotive, and electronic circuits.
This transistor is housed in a compact 3-pin SOT-89 surface mount package which facilitates easy PCB integration in automated assembly lines. It features a single transistor configuration with NPN polarity, providing reliable performance for signal and power control.
The device supports continuous operation from -55°C to 150°C, with a power dissipation of 1 watt to maintain thermal stability. Its minimum current gain (hFE) of 25 ensures efficient amplification across diverse use cases.
Maximum collector current of 1 A. Collector emitter voltage rated at 60 V. Surface mount SOT-89 package with 3 pins. Power dissipation capacity of 1 W. Minimum DC current gain (hFE) of 25. Wide operating temperature range from -55°C to 150°C.
Maximum transition frequency of 150 MHz for high-speed switching. Complies with automotive quality standards AEC-Q100, AEC-Q101, and AEC-Q200.
Typical applications include automotive electronics, industrial equipment, instrumentation, and signal amplification circuits requiring robust, reliable bipolar transistor performance. The BCX5516TA offers a balance of power handling and frequency response.
It is manufactured in China under stringent quality controls to meet automotive and industrial reliability demands. Explore a variety of semiconductor components and bipolars at EnvMart to build durable and efficient electronic systems.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum collector current for this model is 1 ampere.
The BCX5516TA has a collector-emitter voltage rating of 60 volts.
It is housed in a 3-pin SOT-89 surface mount package.
The maximum power dissipation capacity is 1 watt.
The minimum DC current gain (hFE) is 25.
It operates over a temperature range from -55°C to 150°C.
The maximum transition frequency is 150 MHz.
It complies with automotive quality standards AEC-Q100, AEC-Q101, and AEC-Q200.
The height is 1.6 mm and the width is 4.25 mm.
The maximum emitter-base voltage (VEBO) is 5 volts.
It features a single transistor configuration with NPN polarity.
It is manufactured in China under stringent quality controls.
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