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DiodesZetex NPN Transistor BC817-16-7-F, 800 mA Collector Current, 45 V Collector-Emitter Voltage, 3-Pin SOT-23 Surface Mount

Category Semiconductors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BC817-16-7-F
Width 2.5mm
Mount Type Surface
Series BC817
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 310mW
Maximum DC Collector Current Idc 800mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Provides maximum DC collector current of 800 mA for versatile circuit applications.
  • Supports a maximum collector-emitter voltage of 45 V ensuring reliable switching performance.
  • Compact SOT-23 surface mount package with 3 pins for easy PCB mounting.
  • Operates reliably within a wide temperature range from -65°C to 150°C.
  • Features a high transition frequency of 100 MHz for high-speed amplification.
  • Built with a single NPN transistor configuration for general purpose use.
  • Maximum power dissipation of 310 mW suitable for low power applications.
  • Complies with automotive standard AEC-Q101 for quality assurance.

Product Description

DiodesZetex BC817-16-7-F is a general-purpose NPN bipolar junction transistor designed for switching and amplification applications in low power electronic circuits.

This transistor features a maximum DC collector current of 800 mA and a collector-emitter voltage rating of 45 V, making it suitable for a variety of industrial, consumer electronics, and automotive electronic systems.

Housed in a compact 3-pin SOT-23 surface mount package, the BC817-16-7-F enables efficient PCB space utilization and easy automated assembly. The device operates reliably across a wide temperature range from -65°C to 150°C, supporting robust performance in harsh environments.

Its high transition frequency of 100 MHz allows it to be used effectively in high-speed switching circuits and analog amplification tasks. The transistor has a maximum power dissipation of 310 mW and is designed as a single transistor configuration with NPN polarity.

The product meets the automotive standard AEC-Q101, ensuring suitability for automotive and industrial applications demanding high reliability. Provides maximum DC collector current of 800 mA for versatile circuit applications.

Supports a maximum collector-emitter voltage of 45 V ensuring reliable switching performance. Compact SOT-23 surface mount package with 3 pins for easy PCB mounting. Operates reliably within a wide temperature range from -65°C to 150°C.

Features a high transition frequency of 100 MHz for high-speed amplification. Built with a single NPN transistor configuration for general purpose use. Maximum power dissipation of 310 mW suitable for low power applications.

Complies with automotive standard AEC-Q101 for quality assurance.

This transistor is ideal for use in industrial electronics, automotive systems, consumer devices, and other electronic equipment requiring reliable bipolar transistor switching or amplification.

Explore the wide range of semiconductor components and electronics at EnvMart for your design and manufacturing needs.

Explore more products in our Semiconductors category.

DiodesZetex NPN Transistor BC817-16-7-F, 800 mA Collector Current, 45 V Collector-Emitter Voltage, 3-Pin SOT-23 Surface Mount
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Frequently Asked Questions

The maximum DC collector current for this model is 800 mA, making it suitable for various circuit applications.

The BC817-16-7-F supports a maximum collector-emitter voltage of 45 V, ensuring reliable switching performance.

This model is housed in a compact 3-pin SOT-23 surface mount package, facilitating easy PCB mounting.

It operates reliably within a wide temperature range from -65°C to 150°C, suitable for harsh environments.

This transistor features a high transition frequency of 100 MHz, allowing effective use in high-speed switching circuits.

The maximum power dissipation for this model is 310 mW, making it suitable for low power applications.

The minimum DC current gain (hFE) for the BC817-16-7-F is 60, indicating its amplification capability.

This transistor complies with the automotive standard AEC-Q101, ensuring quality assurance for automotive applications.

The dimensions of this model are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It is built with a single NPN transistor configuration, designed for general-purpose use in electronic circuits.

The maximum emitter-base voltage (VEBO) for the BC817-16-7-F is 5 V, which is important for circuit design considerations.

The maximum collector-base voltage (VCBO) for this model is 50 V, which is relevant for its application in various circuits.

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