onsemi PowerTrench N-Channel MOSFET, 214 A, 100 V Enhancement Mode, 3-Pin TO-220 Package FDP036N10A

onsemi FDP036N10A PowerTrench N-Channel MOSFET is a high-performance semiconductor device designed for efficient power switching and management in diverse industrial and electronic applications. With a maximum continuous drain current of 214 A and a drain-source voltage rating of 100 V, this enhancement mode N-channel MOSFET excels in handling substantial loads while maintaining low conduction losses.

The device’s TO-220 package assures robust mechanical stability and thermal dissipation, making it ideal for through hole mounting in power amplifiers, motor controllers, and high power switching circuits. Its maximum drain-source resistance of 3.6 milliohms guarantees high efficiency and minimal power loss during operation. The typical gate charge of 89 nC supports rapid switching, beneficial for high-frequency power conversion systems.

Operating temperature span from -55°C to 175°C allows reliable use in harsh environments, including automotive, industrial controls, and power supplies. The MOSFET tolerates a gate-source voltage range from -20 V to +20 V, providing flexibility in drive voltage requirements. Forward voltage drop of 1.25 V ensures an optimal balance between speed and efficiency.

Manufactured under strict quality norms in China, the FDP036N10A offers durable performance and long service life. It is suitable for a broad spectrum of applications such as power management, motor drives, and electronic switching devices in industrial, laboratory, and commercial settings.

Designed for high current applications with 214 A continuous drain current capacity. Supports 100 V maximum drain to source voltage for enhanced electrical performance. Features a low maximum drain source resistance of 3.6 milliohms, ensuring efficient conduction.

Operates in enhancement mode with an N-channel configuration. Maximum power dissipation rating of 333 W accommodates demanding thermal environments. Includes a typical gate charge of 89 nC at Vgs, optimizing switching performance.

Compatible with through hole mount type and equipped with 3 pins in the TO-220 package. Operates over a wide temperature range from -55°C to 175°C for versatile applications. Maximum gate source voltage tolerance of -20 V to +20 V enhances gate drive capability.

Manufactured in China adhering to quality standards, suitable for industrial use. Explore more onsemi discrete semiconductor MOSFET products on EnvMart for reliable power and switching component solutions.

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