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onsemi PowerTrench N-Channel MOSFET, 9.5 A, 20 V, Enhancement Mode, 6-Pin MLP Package FDMA410NZ

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onsemi PowerTrench N-Channel MOSFET, 9.5 A, 20 V, Enhancement Mode, 6-Pin MLP Package FDMA410NZ

Name: onsemi PowerTrench N-Channel MOSFET, 9.5 A, 20 V, Enhancement Mode, 6-Pin MLP Package FDMA410NZ
Brand: onsemi
SKU: 224008
Price: 0.75 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	750μm
Length	2mm
Model	FDMA410NZ
Width	2mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	MLP
Minimum Operating Temperature	-55°C
Pin Count	6
Channel Type	N
Maximum Continuous Drain Current Id	9.5A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	50mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	900mW
Typical Gate Charge Qg @ Vgs	10nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	1.2V

Key Features

The device utilizes PowerTrench technology providing efficient switching and low conduction losses.
Maximum drain-source resistance is 50 milliohms ensuring low power dissipation.
Operates within a temperature range from -55°C to 150°C for broad application suitability.
Maximum power dissipation rating is 900 mW for reliable performance.
Typical gate charge at Vgs is 10 nC supporting fast switching.
Compact package size with dimensions of 2 mm length, 2 mm width, and 750 µm height.
Designed for surface mounting on printed circuit boards.
Suitable for electronic, power management, and semiconductor applications.

Product Description

onsemi FDMA410NZ PowerTrench N-Channel MOSFET is designed for high efficiency in electronic circuit switching applications. With a maximum continuous drain current of 9.5 A and a drain-source voltage rating of 20 V, it provides robust performance in compact surface mount packages.

This enhancement mode MOSFET features a low maximum drain-source resistance of 50 milliohms, contributing to minimal conduction losses and improved thermal efficiency. Operating over a temperature range from -55°C up to 150°C, it supports demanding industrial and commercial electronic environments.

The device's gate charge of 10 nC at typical gate voltages enables fast switching speeds, suitable for power management circuits and semiconductor applications. Voltage tolerance between the gate and source terminals ranges from -8 V to +8 V ensuring device protection within specified limits.

Measured dimensions are 2 mm in length, 2 mm width, and 750 micrometers in height with a robust 6-pin MLP package designed for surface mounting on PCBs, enabling compact and reliable assembly.

This MOSFET is ideal for use in industrial electronics, power electronics, and semiconductor component manufacturing sectors. The device utilizes PowerTrench technology providing efficient switching and low conduction losses.

Maximum drain-source resistance is 50 milliohms ensuring low power dissipation. Operates within a temperature range from -55°C to 150°C for broad application suitability. Maximum power dissipation rating is 900 mW for reliable performance.

Typical gate charge at Vgs is 10 nC supporting fast switching. Voltage gate-source limits are -8 V to +8 V for device protection. Compact package size with dimensions of 2 mm length, 2 mm width, and 750 µm height. Designed for surface mounting on printed circuit boards.

Suitable for electronic, power management, and semiconductor applications. Explore more onsemi MOSFETs and related semiconductor components in the Electronics & Electricals category at EnvMart.