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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 750μm |
| Length | 3.3mm |
| Model | FDMC86240 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | MLP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 97mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 790mV |
onsemi FDMC86240 PowerTrench N-Channel MOSFET is a high-performance semiconductor device designed for power electronic applications. It supports continuous drain currents up to 19 A and can handle a maximum drain-source voltage of 150 V, making it suitable for a variety of industrial, electronics, and power management uses.
This device utilizes PowerTrench technology, enabling it to deliver low conduction losses through a maximum drain-source resistance of only 97 mΩ. This makes it highly efficient for switching and amplification tasks.
The enhancement mode channel and wide gate-source voltage range from -20 V to +20 V allow precise control and versatility in circuit design. The MOSFET is packaged in an 8-pin MLP surface-mount package, offering compact size and excellent thermal performance with dimensions of 3.3 mm x 3.3 mm x 0.75 mm.
It is rated to dissipate up to 40 Watts of power and operate reliably in harsh temperature environments from -55°C up to 150°C, ensuring durability in industrial and commercial conditions.
Additional features include a forward voltage of 790 mV and a typical gate charge of 11 nC, which support efficient switching speeds and reduced power losses. Employs PowerTrench technology for reliable and efficient MOSFET operation.
Compact 8-pin MLP package enhances integration in dense circuits. Wide operating temperature range from -55°C to 150°C for industrial use. Low maximum Rds(on) of 97 mΩ reduces power dissipation. Max power dissipation rating of 40 W ensures robustness under load.
Surface mount type suitable for automated PCB assembly. Designed for power management and switching applications. Supports harsh industrial environments with maintained performance. Typical gate charge of 11 nC allows for fast switching.
Compact dimensions promote efficient PCB layout designs.
This MOSFET is an ideal choice for electronic components in various sectors including industrial controls, automotive electronics, consumer electronics, and power supply systems. Explore more on reliable semiconductor solutions at EnvMart.
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