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onsemi UniFET N-Channel MOSFET 22 A 500 V Enhancement Mode 3-Pin TO-220 FDP22N50N
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 9.2mm |
| Length | 9.9mm |
| Model | FDP22N50N |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 22A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 220mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 312.5W |
| Typical Gate Charge Qg @ Vgs | 49nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- This MOSFET supports a maximum continuous drain current of 22 amperes.
- Designed with a drain-source voltage rating of 500 volts.
- Features a low on-resistance of 220 milliohms for efficient conduction.
- Enhancement mode operation with a maximum gate-source voltage of ±30 volts.
- Capable of dissipating up to 312.5 watts of power.
- Robust performance with operating temperatures from -55°C to 150°C.
- Compact TO-220 package with 3 pins and through-hole mounting.
- Typical gate charge is 49 nanoCoulombs, optimizing switching speed and efficiency.
Product Description
onsemi FDP22N50N UniFET N-Channel MOSFET is a high-performance enhancement mode transistor designed for industrial electronic power switching applications. Featuring a maximum continuous drain current of 22 amperes and a drain-source voltage rating of 500 volts, it ensures reliable operation in demanding environments.
This device comes in a compact 3-pin TO-220 package suitable for through-hole mounting. Its low on-resistance of 220 milliohms provides reduced conduction losses, improving overall system efficiency. The MOSFET is engineered with a maximum gate-source voltage of ±30 volts and a typical gate charge of 49 nanoCoulombs, delivering fast switching capabilities.
Operating temperature range spans from -55°C to 150°C, making it suitable for harsh industrial conditions. Power dissipation capability of 312.5 watts enables robust use in power conversion circuits such as power factor correction, flat panel display power supplies, ATX power supplies, and electronic lamp ballasts.
The UniFET technology offers superior switching performance with high avalanche energy strength and internal ESD diode protection, allowing withstand of surge stresses over 2000 V HBM. This MOSFET is manufactured in China and meets industrial quality standards.
Maximum continuous drain current of 22 A ensures high power handling capability. 500 V maximum drain-source voltage suits various industrial applications. Low Rds(on) resistance of 220 mΩ minimizes conduction loss. Enhancement mode channel for efficient gate control.
Wide operating temperature range from -55°C to 150°C for reliability. Through-hole TO-220 package for easy PCB mounting and heat dissipation. Typical gate charge of 49 nC contributes to fast switching performance. Maximum power dissipation of 312.5 W supports high power operations.
Suitable for use in power factor correction and electronic lamp ballasts.
This onsemi UniFET MOSFET offers a robust and efficient solution for engineers designing industrial power electronics systems. Explore more products in our MOSFET category at EnvMart for comprehensive semiconductor device selections.
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Frequently Asked Questions
The maximum continuous drain current for this model is 22 amperes.
It has a drain-source voltage rating of 500 volts.
The on-resistance is 220 milliohms, which helps reduce conduction losses.
It can dissipate up to 312.5 watts of power.
The operating temperature range spans from -55°C to 150°C.
This model comes in a compact TO-220 package suitable for through-hole mounting.
The typical gate charge is 49 nanoCoulombs, optimizing switching speed and efficiency.
The maximum gate-source voltage is ±30 volts.
This MOSFET features a 3-pin configuration.
It utilizes an N-channel for enhancement mode operation.
This product is manufactured in China.
This model belongs to the UniFET series.
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