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onsemi N-Channel Enhancement Mode MOSFET 500 mA 60 V 3-Pin SOT-23 MMBF170

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 930μm
Length 2.92mm
Model MMBF170
Width 1.3mm
Mount Type Surface
Series MMBF170L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 500mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 300mW
Maximum Gate Source Voltage Vgs -20, +20V

Key Features

  • Features a surface mount SOT-23 package for compact applications.
  • Has a maximum continuous drain current of 500 mA ensuring efficient performance.
  • Supports maximum drain-source voltage of 60 V with low resistance of 5 Ohms.
  • Operates within a temperature range from -55°C to 150°C for durability.
  • Designed with enhancement mode channel for fast switching and rugged operation.
  • Maximum power dissipation is 300 mW suitable for low power applications.
  • 3-pin configuration allows easy integration in electronic circuits.
  • Manufactured in China with high quality standards suitable for industrial use.

Product Description

onsemi MMBF170 is a high-density enhancement mode N-Channel MOSFET transistor designed for efficient switching and control in electronic circuits. Housed in a compact 3-pin SOT-23 surface mount package, this device supports a maximum continuous drain current of 500 mA and a drain-source voltage of 60 V, making it suitable for low-power electronic applications and signal processing.

The MOSFET is designed with Fairchild Semiconductor's proprietary high cell density DMOS technology, minimizing on-state resistance and providing rugged, reliable, and fast switching performance. It operates effectively in industrial and commercial electronics requiring stable and efficient transistor action.

Its specifications include an enhancement mode channel type with a maximum drain-source resistance of 5 Ohms and a gate-source voltage range from -20 V to +20 V. The device supports a wide operating temperature range from -55°C to 150°C, providing stability and reliability under varying environmental conditions. Power dissipation capability is rated at 300 mW.

Features a surface mount SOT-23 package that is ideal for compact electronic assemblies. Provides a maximum continuous drain current of 500 mA for effective signal switching. Designed for operation at 60 V drain-source voltage with low on-resistance.

Wide temperature tolerance enhancing applicability in various industrial environments. Compact 3-pin transistor suitable for integration in diverse electronic circuit designs. Manufactured with quality assurance for industrial and commercial electronic equipment.

Supports enhancement mode field effect transistor operations for fast switching.

This MOSFET transistor is suited for use in electronic components manufacturing, power management circuits, and semiconductor applications in industrial, laboratory, and commercial environments. It serves as an essential component in enhancing the performance and reliability of electronic devices requiring efficient switching and control.

Explore more semiconductor components and MOSFET products in the Electronics & Electricals category at EnvMart for a wide range of high-quality industrial electronic components.

onsemi N-Channel Enhancement Mode MOSFET 500 mA 60 V 3-Pin SOT-23 MMBF170
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Frequently Asked Questions

The maximum continuous drain current for this model is 500 mA.

It supports a maximum drain-source voltage of 60 V.

The maximum drain-source resistance is 5 Ohms.

It operates within a temperature range from -55°C to 150°C.

This unit is housed in a compact 3-pin SOT-23 surface mount package.

The maximum power dissipation capability is rated at 300 mW.

It has a gate-source voltage range from -20 V to +20 V.

The enhancement mode channel allows for fast switching and rugged operation.

The dimensions are 2.92 mm in length, 1.3 mm in width, and 930 μm in height.

This MOSFET is suited for electronic components manufacturing, power management circuits, and semiconductor applications in industrial and commercial environments.

It is manufactured in China with high quality standards suitable for industrial use.

This model uses an N-channel enhancement mode design.

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