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onsemi N-Channel Enhancement Mode MOSFET 1.7 A 30 V 3-Pin SOT-23 NDS355AN
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | NDS355AN |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | NDS355 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.7A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 230mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This enhancement mode N-channel MOSFET provides robust and reliable performance ideal for switching applications.
- Features a low maximum drain-source resistance of 230 milliohms to improve efficiency.
- Supports a maximum gate-source voltage range from -20 V to +20 V ensuring safe drive conditions.
- Has a maximum power dissipation rating of 500 mW suitable for low power circuits.
- Operates reliably within a temperature range of -55°C to 150°C.
- Compact SOT-23 surface mount package with a 1.4 mm width and 2.92 mm length for space-saving PCB design.
- Typical gate charge at Vgs is 3.5 nC for fast switching performance.
- Forward voltage drop is 1.2 V contributing to overall low loss in circuits.
Product Description
onsemi NDS355AN is an enhancement mode N-channel MOSFET transistor designed for high efficiency and ruggedness in switching applications. It supports a maximum continuous drain current of 1.7 A and can tolerate a maximum drain-source voltage of 30 V, making it well-suited for low voltage power switching in electronic circuits.
The device comes in a compact 3-pin SOT-23 surface mount package, measuring 2.92 mm in length, 1.4 mm in width, and 940 µm in height, optimizing space on printed circuit boards. Its low on-state resistance of 230 milliohms reduces power losses during operation.
Designed to operate in a temperature range from -55°C to 150°C, it is suitable for various industrial, commercial, and automotive electronic applications where durability and reliability are essential. The MOSFET is driven with a gate-source voltage window between -20 V and +20 V and features a typical gate charge of 3.5 nC, which supports fast switching frequencies.
This enhancement type device from onsemi is built using high cell density DMOS technology, which minimizes on-state resistance and improves switching speed for better efficiency and performance. The forward voltage across the device is typically 1.2 V, contributing to energy savings in the circuit.
This enhancement mode N-Channel MOSFET delivers efficient switching performance. Low maximum drain-source resistance of 230 mΩ enhances circuit efficiency. Wide gate-source voltage range of -20 V to +20 V suited for versatile control.
Power dissipation up to 500 mW supports small signal applications. Temperature operation from -55°C to 150°C ensures reliability in harsh environments. Compact 3-pin SOT-23 surface mount package saves PCB space. Typical gate charge of 3.5 nC promotes high switching speed.
Forward voltage drop of 1.2 V contributes to low conduction losses.
The onsemi NDS355AN is ideal for industrial and consumer electronics, laboratory equipment, and other electronic industry sectors requiring reliable low voltage switching components. Explore the extensive catalogue of discrete semiconductors and MOSFET devices at EnvMart for varied power control solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.7 A.
It can tolerate a maximum drain-source voltage of 30 V.
The low maximum drain-source resistance is 230 milliohms, which helps improve efficiency.
It operates reliably within a temperature range of -55°C to 150°C.
This MOSFET is housed in a compact 3-pin SOT-23 surface mount package.
The typical gate charge at Vgs is 3.5 nC, which supports fast switching performance.
It has a maximum power dissipation rating of 500 mW, making it suitable for low power circuits.
The forward voltage drop is typically 1.2 V, contributing to overall low loss in circuits.
It supports a maximum gate-source voltage range from -20 V to +20 V, ensuring safe drive conditions.
The dimensions are 2.92 mm in length, 1.4 mm in width, and 940 µm in height.
This model features an enhancement mode N-channel configuration.
It is ideal for industrial and consumer electronics, laboratory equipment, and other electronic industry sectors requiring reliable low voltage switching components.
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