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onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET 2.5 A 30 V Enhancement 6-Pin SOT-23 FDC6333C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC6333C |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 220mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 960mW |
| Typical Gate Charge Qg @ Vgs | 4.7nC |
| Maximum Gate Source Voltage Vgs | -25, -16, +16, +25V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET features a 6-pin SOT-23 package suitable for surface mounting.
- It delivers low gate charge of 4.7 nC for efficient switching performance.
- The maximum drain-source resistance is 220 mΩ, ensuring low conduction losses.
- It operates across a wide temperature range from -55°C to 150°C.
- The device includes a forward voltage of 0.8 V with an isolated transistor configuration.
- Advanced shielded-gate structure reduces figure of merit (FOM) for improved power efficiency.
- Soft body diode performance reduces or eliminates the need for snubber circuits.
- Ideal for use in synchronous rectification of AC/DC power supplies and other power management applications.
Product Description
onsemi FDC6333C Isolated PowerTrench 2 Type P, Type N-Channel MOSFET is a high-efficiency dual N/P-channel MOSFET designed for power switching applications requiring up to 2.5 A continuous drain current and a maximum drain-source voltage of 30 V. Packaged in a compact 6-pin SOT-23 surface mount package, this device is optimized for low gate charge and low resistive losses. It operates within a temperature range of -55°C to 150°C, making it suitable for demanding industrial and commercial environments.
Featuring an enhancement mode channel and an isolated transistor configuration, the FDC6333C incorporates advanced shielded-gate technology that provides charge balance and significantly lowers the figure of merit (FOM) compared to previous device generations. The MOSFET's soft reverse recovery body diode further enhances switching performance by minimizing switching losses and enabling the elimination of snubber circuits or replacement with higher voltage MOSFETs.
This device exhibits a maximum gate-source voltage tolerance of ±25 V and a typical gate charge of only 4.7 nC at standard gate-source voltages. It sustains maximum power dissipation of 960 mW, forward voltage of 0.8 V, and a maximum drain-source resistance of 220 mΩ, contributing to improved energy efficiency and reliability in power supply circuits.
onsemi's PowerTrench® MOSFETs, including the FDC6333C, are widely utilized in industrial power management, AC/DC power supplies, synchronous rectification circuits, and various electronic components where efficient power switching, low conduction losses, and thermal stability are critical.
This MOSFET is housed in a compact 6-pin SOT-23 surface mount package suitable for automated assembly. It supports continuous operation up to 150°C, enabling robust performance in harsh environments. The device is RoHS compliant and designed without specific automotive standards, suitable for general industrial use.
Its isolated transistor configuration supports dual-element per chip design, improving circuit flexibility. Optimized for low gate charge and soft body diode performance to enhance switching efficiency. Recommended for use in applications requiring low on-resistance and fast switching MOSFETs.
Explore more advanced MOSFETs and power management solutions at EnvMart to optimize your electronic designs and improve system efficiency.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.5 A.
It can handle a maximum drain-source voltage of 30 V.
The typical gate charge is 4.7 nC at standard gate-source voltages.
The maximum power dissipation for this model is 960 mW.
The maximum drain-source resistance is 220 mΩ.
It operates within a temperature range of -55°C to 150°C.
This MOSFET is packaged in a 6-pin SOT-23 surface mount configuration.
The forward voltage is 0.8 V.
This model features 2 elements per chip.
The channel type is both Type P and Type N.
The maximum gate-source voltage tolerance is ±25 V.
It is suitable for synchronous rectification of AC/DC power supplies and various power management applications.
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