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DiodesZetex Small Signal Dual NPN + PNP Bipolar Transistor 100 mA 45 V 6-Pin SOT-363 BC847PN-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model BC847PN-7-F
Width 2.2mm
Mount Type Surface
Series BC847PN
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -65°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 200MHz

Key Features

  • This transistor is configured as isolated with dual NPN and PNP polarity.
  • Maximum DC collector current rating is 100 mA ensuring robust signal amplification.
  • Maximum collector-emitter voltage is 45 volts suitable for low power circuit integration.
  • Package type is SOT-363 with surface mount technology for compact PCB design.
  • Operating temperature range from -65°C to 150°C permits use in varying environmental conditions.
  • Maximum transition frequency of 200 MHz supports high frequency switching and amplification.
  • Maximum power dissipation rating is 200 mW for efficient thermal management.
  • Pin count is 6 providing dual transistor functionality within a single package.

Product Description

DiodesZetex BC847PN-7-F is a high-quality small signal dual NPN + PNP bipolar transistor packaged in a 6-pin SOT-363 surface mount enclosure. This transistor is engineered for applications requiring low power, high frequency, and dual transistor functionality, suitable for industrial, automotive, and electronic component manufacturing sectors.

The transistor delivers a maximum DC collector current of 100 mA and can withstand a collector-emitter voltage up to 45 V. Its isolated transistor configuration enables reliable signal isolation within circuits, making it ideal for amplification and switching tasks in complex electronic assemblies.

This device operates efficiently within a temperature range from -65°C up to 150°C and offers a maximum power dissipation capacity of 200 mW, maintaining thermal stability in demanding environments. Featuring an impressive transition frequency of 200 MHz, the BC847PN-7-F transistor supports high-speed switching and signal processing applications.

The compact SOT-363 package allows for surface mounting on printed circuit boards, saving space and enhancing circuit density. With a pin count of 6, the device integrates dual transistors, improving design efficiency. This transistor also complies with the stringent Automotive Standard AEC-Q101, verifying reliability in automotive electronic systems.

Dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height make the BC847PN-7-F suitable for miniaturized electronics requiring durable and flexible transistor solutions. This transistor is configured as isolated with dual NPN and PNP polarity.

Maximum DC collector current rating is 100 mA ensuring robust signal amplification. Maximum collector-emitter voltage is 45 volts suitable for low power circuit integration. Package type is SOT-363 with surface mount technology for compact PCB design.

Operating temperature range from -65°C to 150°C permits use in varying environmental conditions. Maximum transition frequency of 200 MHz supports high frequency switching and amplification. Maximum power dissipation rating is 200 mW for efficient thermal management.

Pin count is 6 providing dual transistor functionality within a single package. Meets Automotive Standard AEC-Q101 for reliability in automotive electronics. Compact dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height facilitate miniaturized device design.

This transistor is extensively used in electronic devices requiring reliable, dual transistor signal amplification and switching. Its compliance with automotive standards and compact form factor make it suitable for applications in automotive electronics, industrial automation, and consumer electronics.

Explore the full range of Bipolar Transistors and semiconductor components at EnvMart for your electronic design and manufacturing needs.

DiodesZetex Small Signal Dual NPN + PNP Bipolar Transistor 100 mA 45 V 6-Pin SOT-363 BC847PN-7-F
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Frequently Asked Questions

The maximum DC collector current rating of this model is 100 mA, ensuring robust signal amplification.

This transistor can withstand a maximum collector-emitter voltage of 45 V, making it suitable for low power circuit integration.

The operating temperature range for the BC847PN-7-F is from -65°C to 150°C, allowing use in varying environmental conditions.

The maximum transition frequency of this unit is 200 MHz, supporting high frequency switching and amplification.

This transistor is packaged in a SOT-363 format, which is designed for surface mount technology, facilitating compact PCB design.

The BC847PN-7-F features a pin count of 6, providing dual transistor functionality within a single package.

The maximum power dissipation rating for this transistor is 200 mW, which aids in efficient thermal management.

The height of this transistor is 1.1 mm, making it suitable for miniaturized electronic designs.

Yes, the BC847PN-7-F complies with the Automotive Standard AEC-Q101, verifying its reliability in automotive electronic systems.

This model is configured as isolated with dual NPN and PNP polarity, allowing for versatile applications in signal amplification.

The maximum emitter-base voltage (VEBO) for this unit is 6 V, ensuring safe operation within specified limits.

The minimum DC current gain (hFE) for this transistor is 200, indicating its efficiency in signal amplification.

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