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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 3.4mm |
| Length | 3.4mm |
| Model | ISZ230N10NM6ATMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | ISZ230N10 |
| Maximum Operating Temperature | 175°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8.04mΩ |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon ISZ230N10NM6ATMA1 is a high-performance N-Channel MOSFET designed for industrial power applications requiring high switching frequencies. Offering a continuous drain current of 31 A and a maximum drain-source voltage of 100 V, this MOSFET is packaged in an 8-pin TSDSON surface mount format, measuring 3.4 mm in length and height, and 1.1 mm in width.
Engineered for telecom, server power supplies, solar power systems, power tools, and drones, the ISZ230N10 offers low conduction losses combined with low switching losses due to its low and soft reverse recovery charge. Its high avalanche energy rating promotes reliability under transient conditions.
The MOSFET supports a wide operating temperature range from -55 degrees Celsius to 175 degrees Celsius, ensuring robust performance in demanding industrial environments. Its typical gate charge of 24 nanocoulombs at Vgs and maximum gate-source voltage of 20 volts enable efficient and precise gate control.
With a forward voltage drop of 1 volt, the device achieves efficient conduction while maintaining compact size and easy surface mounting installation. The device complies with RoHS directives, reflecting environmental responsibility in industrial component design.
Designed for high frequency switching in telecom and server power supply applications. Low conduction and switching losses improve energy efficiency. Compact 8-pin TSDSON package supports dense PCB layouts. High avalanche energy rating ensures device robustness.
Wide operating temperature range from -55°C to 175°C. Typical gate charge of 24 nC facilitates rapid switching. Maximum gate-source voltage rating of 20 V enhances gate control flexibility. Forward voltage of 1 V supports low loss conduction.
Surface mount package enables easy assembly. RoHS compliant ensuring environmental safety.
This Infineon MOSFET is ideal for diverse industrial, laboratory, telecom, and power management applications requiring reliable, high-performance power switching components. Browse EnvMart for more Infineon power devices and semiconductor components.
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