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Infineon Industrial Power N-Channel MOSFET 31 A, 100 V, 8-Pin TSDSON Package ISZ230N10NM6ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 3.4mm
Length 3.4mm
Model ISZ230N10NM6ATMA1
Width 1.1mm
Mount Type Surface
Series ISZ230N10
Maximum Operating Temperature 175°C
Package Type TSDSON
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 31A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 8.04mΩ
Maximum Power Dissipation Pd 100W
Typical Gate Charge Qg @ Vgs 24nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Designed for high switching frequency applications such as telecom and server power supplies.
  • Features low conduction and switching losses for improved efficiency.
  • Low and soft reverse recovery charge reduces switching losses.
  • High avalanche energy rating ensures robust operation.
  • Wide operating temperature range from -55°C to 175°C.
  • Compact 3.4 mm x 3.4 mm x 1.1 mm TSDSON package for surface mounting.
  • Typical gate charge of 24 nC enables fast switching.
  • Maximum gate-source voltage rating of 20 V facilitates control flexibility.

Product Description

Infineon ISZ230N10NM6ATMA1 is a high-performance N-Channel MOSFET designed for industrial power applications requiring high switching frequencies. Offering a continuous drain current of 31 A and a maximum drain-source voltage of 100 V, this MOSFET is packaged in an 8-pin TSDSON surface mount format, measuring 3.4 mm in length and height, and 1.1 mm in width.

Engineered for telecom, server power supplies, solar power systems, power tools, and drones, the ISZ230N10 offers low conduction losses combined with low switching losses due to its low and soft reverse recovery charge. Its high avalanche energy rating promotes reliability under transient conditions.

The MOSFET supports a wide operating temperature range from -55 degrees Celsius to 175 degrees Celsius, ensuring robust performance in demanding industrial environments. Its typical gate charge of 24 nanocoulombs at Vgs and maximum gate-source voltage of 20 volts enable efficient and precise gate control.

With a forward voltage drop of 1 volt, the device achieves efficient conduction while maintaining compact size and easy surface mounting installation. The device complies with RoHS directives, reflecting environmental responsibility in industrial component design.

Designed for high frequency switching in telecom and server power supply applications. Low conduction and switching losses improve energy efficiency. Compact 8-pin TSDSON package supports dense PCB layouts. High avalanche energy rating ensures device robustness.

Wide operating temperature range from -55°C to 175°C. Typical gate charge of 24 nC facilitates rapid switching. Maximum gate-source voltage rating of 20 V enhances gate control flexibility. Forward voltage of 1 V supports low loss conduction.

Surface mount package enables easy assembly. RoHS compliant ensuring environmental safety.

This Infineon MOSFET is ideal for diverse industrial, laboratory, telecom, and power management applications requiring reliable, high-performance power switching components. Browse EnvMart for more Infineon power devices and semiconductor components.

Infineon Industrial Power N-Channel MOSFET 31 A, 100 V, 8-Pin TSDSON Package ISZ230N10NM6ATMA1
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Frequently Asked Questions

The maximum continuous drain current for the ISZ230N10NM6ATMA1 is 31 A.

This model has a maximum drain-source voltage rating of 100 V.

The typical gate charge for the ISZ230N10 is 24 nC at Vgs.

The TSDSON package measures 3.4 mm in length and height, and 1.1 mm in width.

The operating temperature range for this model is from -55°C to 175°C.

The forward voltage drop for the ISZ230N10NM6ATMA1 is 1 V.

The maximum gate-source voltage rating is 20 V, allowing for flexible control.

The maximum power dissipation for this MOSFET is 100 W.

This model features a surface mount type for easy installation.

The channel type of this MOSFET is N-channel.

It is designed for high-frequency switching applications such as telecom and server power supplies, as well as solar power systems and power tools.

The ISZ230N10NM6ATMA1 complies with RoHS directives, reflecting its environmental responsibility.

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