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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB330P10NMATMA1 |
| Mount Type | Surface |
| Series | iPB |
| Package Type | TO-263 |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 62A |
| Maximum Drain Source Voltage Vds | 100V |
| Channel Mode | N |
Infineon IPB330P10NMATMA1 is a high-quality P-Channel MOSFET designed for use in various industrial and electronic components applications. It features a continuous drain current rating of 62 A and a maximum drain-source voltage of 100 V, ideal for demanding power management tasks.
Packaged in an industry-standard TO-263 surface mount format with 3 pins, this MOSFET is optimized for battery management systems, load switching, and reverse polarity protection. The P-Channel topology simplifies designs in medium and low power applications by minimizing complexity.
This device incorporates fast switching capabilities and avalanche ruggedness, making it suitable for both high and low switching frequencies in industrial automation and electronic control systems. Its wide RDS(on) range ensures improved efficiency, particularly at low loads, enhancing overall system performance.
The MOSFET interfaces effectively with microcontroller units (MCUs), facilitating easy integration into complex control circuits. Suitable for battery management and load switch circuits. Features avalanche ruggedness for increased durability.
Standard TO-263 package enables straightforward surface mounting on PCBs. Wide RDS(on) range improves low load efficiency. Fast switching supports various frequency ranges. Robust and reliable performance in industrial environments.
P-Channel design reduces design complexity. Compatible with MCU interfacing for system control.
This MOSFET supports a broad range of industrial and electronic applications including power management, industrial automation, and laboratory use cases. Its reliable characteristics make it a preferred choice for designers seeking performance and durability in a compact package.
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