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Infineon iPB Type P-Channel MOSFET, 62 A, 100 V, 3-Pin TO-263 Surface Mount IPB330P10NMATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPB330P10NMATMA1
Mount Type Surface
Series iPB
Package Type TO-263
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 62A
Maximum Drain Source Voltage Vds 100V
Channel Mode N

Key Features

  • Suitable for battery management, load switch and reverse polarity protection applications.
  • P-Channel design reduces complexity in medium and low power electronic circuits.
  • Fast switching characteristics and avalanche ruggedness enhance reliability.
  • Industry-standard surface mount TO-263 package with 3 pins for easy PCB integration.
  • Wide RDS(on) range improves efficiency under low loads.
  • Robust construction ensures reliable operation in industrial automation tasks.
  • Compatible with MCU interfacing for precise control.
  • Design optimized for both high and low frequency switching applications.

Product Description

Infineon IPB330P10NMATMA1 is a high-quality P-Channel MOSFET designed for use in various industrial and electronic components applications. It features a continuous drain current rating of 62 A and a maximum drain-source voltage of 100 V, ideal for demanding power management tasks.

Packaged in an industry-standard TO-263 surface mount format with 3 pins, this MOSFET is optimized for battery management systems, load switching, and reverse polarity protection. The P-Channel topology simplifies designs in medium and low power applications by minimizing complexity.

This device incorporates fast switching capabilities and avalanche ruggedness, making it suitable for both high and low switching frequencies in industrial automation and electronic control systems. Its wide RDS(on) range ensures improved efficiency, particularly at low loads, enhancing overall system performance.

The MOSFET interfaces effectively with microcontroller units (MCUs), facilitating easy integration into complex control circuits. Suitable for battery management and load switch circuits. Features avalanche ruggedness for increased durability.

Standard TO-263 package enables straightforward surface mounting on PCBs. Wide RDS(on) range improves low load efficiency. Fast switching supports various frequency ranges. Robust and reliable performance in industrial environments.

P-Channel design reduces design complexity. Compatible with MCU interfacing for system control.

This MOSFET supports a broad range of industrial and electronic applications including power management, industrial automation, and laboratory use cases. Its reliable characteristics make it a preferred choice for designers seeking performance and durability in a compact package.

Explore more power and discrete semiconductor products to optimize your designs on EnvMart.

Infineon iPB Type P-Channel MOSFET, 62 A, 100 V, 3-Pin TO-263 Surface Mount IPB330P10NMATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 62 A.

This MOSFET has a maximum drain-source voltage of 100 V.

It comes in an industry-standard TO-263 surface mount package with 3 pins.

It is suitable for battery management, load switching, and reverse polarity protection applications.

The P-Channel design reduces complexity in medium and low power electronic circuits.

This MOSFET features fast switching characteristics and avalanche ruggedness, enhancing reliability.

Yes, it is compatible with MCU interfacing for precise control in electronic circuits.

The channel type of this model is P-Channel.

The wide RDS(on) range improves efficiency under low load conditions.

This model is designed for surface mounting.

The country of origin for this MOSFET is India.

This model belongs to the iPB series.

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