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Infineon IPD Type P-Channel MOSFET 9A 150V Enhancement Mode 3-Pin TO-252 IPD42DP15LMATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD42DP15LMATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 420mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | -43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Designed for battery management and load switch applications.
- Logic-level enhanced channel provides efficient switching.
- Robust avalanche ruggedness for reliability.
- Surface mount TO-252 package with industry standard footprint.
- High maximum power dissipation of 83W supports demanding industrial use.
- Wide operating temperature range from -55°C to 175°C.
- Low typical gate charge enhances switching efficiency.
- Maximum drain-source resistance of 420 milliohms ensures low conduction loss.
Product Description
Infineon IPD42DP15LMATMA1 is a P-Channel MOSFET designed for high efficiency and reliable performance in battery management, load switching, and reverse polarity protection. This device operates at a maximum continuous drain current of 9A and a maximum drain-source voltage of 150V, featuring an enhancement mode channel in a compact TO-252 surface mount package.
The device's logic-level channel mode and low gate charge (-43nC at Vgs) support efficient switching with reduced power loss, making it suitable for industrial automation and demanding electronic applications. Its robust avalanche ruggedness ensures stable operation under high stress conditions.
Key mechanical dimensions include a length of 6.73 mm, width of 6.22 mm, and height of 2.41 mm, catering to dense board layouts with standard footprint compatibility. The MOSFET sustains operating temperatures from -55°C up to 175°C, supporting a wide range of environments.
Enables simplified design complexity for medium and low power applications. Provides fast switching speeds and easy microcontroller interfacing. Industry-standard surface mount TO-252 package for versatility. Typical forward voltage of -1.2V supports efficient conduction.
Maximum gate-source voltage rating of 20V ensures device protection. Enhanced reliability through high power dissipation capability (83W). Widely used in battery management, industrial automation, and power electronics. Suits applications requiring compact and robust semiconductor devices.
The product is new, sourced from India by default, and complies with no explicit certifications. It is an ideal discrete semiconductor choice for demanding electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9A.
This MOSFET has a maximum drain-source voltage of 150V.
The typical gate charge at Vgs is -43nC, which enhances its switching efficiency.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
It operates within a temperature range of -55°C to 175°C.
The maximum power dissipation capability is 83W, suitable for demanding industrial applications.
This model features a P-Channel enhancement mode channel.
The maximum gate-source voltage rating is 20V, ensuring device protection.
It has a maximum drain-source resistance of 420 milliohms, which ensures low conduction loss.
The typical forward voltage is -1.2V, supporting efficient conduction.
This model uses a surface mount type, specifically in a TO-252 package.
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