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Infineon IPD Type P-Channel MOSFET 13.7 A 100 V Enhancement 3-Pin TO-252 IPD19DP10NMATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD19DP10NMATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 13.7A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 186mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | -36nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Features a 3-pin TO-252 surface mount package for easy integration.
- Supports enhancement mode operation for precise switching control.
- Maximum power dissipation of 83 W ensures robust thermal performance.
- Low typical gate charge improves switching efficiency at low load.
- Operating temperature range from -55°C to 175°C suitable for harsh environments.
- Low drain-source resistance of 186 mΩ reduces power loss during conduction.
- Designed for battery management, load switching, and reverse polarity protection.
Product Description
Infineon IPD19DP10NMATMA1 represents a high-performance P-Channel MOSFET designed for reliable electronic component applications requiring efficient power handling. This device supports a maximum continuous drain current of 13.7 A and a maximum drain-source voltage of 100 V, enclosed in a compact 3-pin TO-252 surface mount package.
Its enhancement mode channel operation provides fast and reliable switching, making it ideal for battery management systems, industrial automation, and load switch applications. The MOSFET features a low drain-source resistance of 186 mΩ, contributing to improved efficiency and reduced thermal losses.
The device can operate reliably across a broad temperature range from -55°C to 175°C, making it suited for demanding industrial environments. Typically, the gate charge at Vgs is -36 nC, facilitating low switching losses and efficiency at low loads. A maximum power dissipation rating of 83 W supports robust performance under high-demand conditions.
Infineon's IPDMOS series targets modern power electronics with easy MCU interfacing and avalanche ruggedness for added reliability. The compact physical dimensions of 6.73 mm length, 6.22 mm width, and 2.41 mm height enable flexible PCB layout integration.
Features a 3-pin TO-252 surface mount package. Low Rds(on) enhances efficiency in power management circuits. Suitable for battery management and load switching electronics. Wide operating temperature range enables usage in industrial and automotive settings.
Low gate charge optimizes switching performance and power consumption. Robust power dissipation capability for high current loads. Compact design supports space-constrained PCB arrangements. Easy Interface with MCUs and reliable avalanche ruggedness improves system durability.
This Infineon P-Channel MOSFET is ideal for applications in industrial automation, battery management, and other electronic control systems requiring reliable and efficient switching components. Explore more related semiconductor components and MOSFET solutions in our Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IPD19DP10NMATMA1 is 13.7 A.
This model has a maximum drain-source voltage rating of 100 V.
It supports a maximum power dissipation of 83 W, ensuring robust thermal performance under high-demand conditions.
The operating temperature range is from -55°C to 175°C, making it suitable for harsh environments.
The typical gate charge at Vgs is -36 nC, which helps in reducing switching losses.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
The low drain-source resistance is 186 mΩ, which reduces power loss during conduction.
This device features an enhancement mode P-Channel configuration.
It is suitable for battery management, load switching, and reverse polarity protection applications.
The maximum gate-source voltage is 20 V.
This model has a 3-pin configuration, facilitating easy integration into circuits.
The country of origin for the Infineon IPD19DP10NMATMA1 is India.
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