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Infineon IPD Type P-Channel MOSFET 9A 150V Enhancement 3-Pin TO-252 IPD42DP15LMATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD42DP15LMATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 420mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | -43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Designed with enhancement channel mode for efficient switching performance.
- Maximum power dissipation is rated at 83 watts for robust operation.
- Features low typical gate charge of -43 nC at Vgs for improved efficiency.
- Wide operating temperature range from -55 °C to 175 °C ensures reliability.
- Suitable for battery management, load switching, and reverse polarity protection applications.
- Industry-standard TO-252 DPAK package provides ease of assembly and compatibility.
- Avalanche rugged design ensures robustness in demanding industrial environments.
- Logic-level gate drive improves efficiency at low loads and is MCU interface friendly.
Product Description
Infineon IPD42DP15LMATMA1 is a high-performance P-Channel MOSFET designed for medium and low power applications requiring efficient switching and robust operation.
This MOSFET has a maximum continuous drain current of 9 amperes and can withstand a maximum drain-source voltage of 150 volts, making it suitable for various power management tasks.
The device is packaged in a TO-252 DPAK surface mount package with dimensions 6.73 mm length, 6.22 mm width, and 2.41 mm height, providing a compact footprint for dense PCB layouts.
Featuring an enhancement mode channel and logic-level gate drive, it offers low typical gate charge (-43 nC at Vgs) which enhances efficiency especially under low load conditions, and simplifies control with microcontrollers.
Its maximum power dissipation of 83 watts and wide operating temperature range (-55 °C to 175 °C) ensure reliable performance in industrial and automotive environments.
The MOSFET is avalanche rugged, increasing its durability against electrical stress, and is ideal for applications such as battery management, load switching, and reverse polarity protection within industrial automation and power electronics.
Designed with enhancement channel mode for efficient switching performance. Maximum power dissipation is rated at 83 watts for robust operation. Features low typical gate charge of -43 nC at Vgs for improved efficiency. Wide operating temperature range from -55 °C to 175 °C ensures reliability.
Compact package dimensions: 6.73 mm length, 6.22 mm width, and 2.41 mm height. Suitable for battery management, load switching, and reverse polarity protection applications. Industry-standard TO-252 DPAK package provides ease of assembly and compatibility.
Avalanche rugged design ensures robustness in demanding industrial environments. Logic-level gate drive improves efficiency at low loads and is MCU interface friendly. This product is suitable for use in industrial, automotive, and power management systems requiring reliable and efficient semiconductor solutions.
Explore EnvMart's range of Infineon MOSFETs for high-quality electronic components designed to meet demanding engineering specifications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9 amperes.
It can withstand a maximum drain-source voltage of 150 volts.
The maximum power dissipation is rated at 83 watts.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
The operating temperature range is from -55 °C to 175 °C.
It features a low typical gate charge of -43 nC at Vgs, which enhances efficiency.
This model is suitable for battery management, load switching, and reverse polarity protection applications.
The channel type is P-Channel, designed for enhancement mode operation.
The maximum gate-source voltage is 20 volts.
This model has a pin count of 3.
The maximum drain-source resistance is rated at 420 mΩ.
Yes, it is designed for surface mounting with a TO-252 package type.
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