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Infineon IPD Type P-Channel MOSFET 22 A, 100 V Enhancement Mode, 3-Pin TO-252 IPD11DP10NMATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD11DP10NMATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 22A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 111mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | -59nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- The MOSFET features a maximum continuous drain current of 22 A for robust current handling.
- It operates at a maximum drain-source voltage of 100 V, suitable for medium voltage applications.
- Its low typical gate charge of 59 nC enables fast switching performance.
- The device supports a maximum power dissipation of 125 W, allowing efficient thermal management.
- Designed with an enhancement channel mode, it assures reliable switching with low on-resistance of 111 mΩ.
- Operating temperature ranges from -55°C to 175°C for durability in harsh conditions.
- The MOSFET package dimensions are 6.73 mm length, 6.22 mm width, and 2.41 mm height.
- Its forward voltage is -1.2 V, optimizing conduction efficiency.
Product Description
Infineon IPD11DP10NMATMA1 is a P-Channel MOSFET featuring a maximum continuous drain current of 22 A and a maximum drain-source voltage of 100 V. Packaged in a compact TO-252 3-pin surface mount format, this enhancement mode MOSFET is designed to deliver efficient switching and enhanced reliability for a range of electronic and power management applications.
This device represents Infineon's OptiMOS™ technology, targeting battery management systems, load switch functions, and reverse polarity protection in various industrial and commercial environments. It simplifies design complexity in medium and low power applications by leveraging the advantages of a P-channel device which facilitates easy interface to microcontroller units (MCUs).
The MOSFET features a low typical gate charge of 59 nC measured at a gate-source voltage, enabling fast switching speeds and reduced switching losses. Its on-resistance of 111 mΩ at maximum rating ensures efficient conduction and power handling, with a maximum power dissipation of 125 W under appropriate thermal conditions. The device operates reliably within a temperature span from -55°C up to 175°C, making it suitable for demanding environments.
Physical dimensions of the package are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height, providing a compact footprint suitable for space-constrained designs. The MOSFET is specified with a forward voltage drop of -1.2 V and a maximum gate source voltage rating of 20 V to prevent gate damage.
Infineon IPD11DP10NMATMA1 is used extensively in industrial automation systems, battery-powered equipment, and other applications requiring high quality, robust power switching components. It offers an ideal balance between ease of integration, performance, and durability.
The MOSFET simplifies design complexity with its P-channel configuration. It allows a wide operating temperature range for durable usage. Low gate charge reduces switching losses for improved efficiency. Robust construction supports industrial and automotive-related applications.
Compact TO-252 package suits space-limited PCB layouts. Enables high-quality power management and protection circuits. Explore further Infineon semiconductor solutions and other MOSFET products available through EnvMart for trusted industrial electronics components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 22 A, allowing robust current handling for various applications.
This MOSFET operates at a maximum drain-source voltage of 100 V, making it suitable for medium voltage applications.
The package dimensions are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height, providing a compact footprint for PCB layouts.
The typical gate charge is 59 nC, which enables fast switching performance and reduced switching losses.
It supports a maximum power dissipation of 125 W, allowing for efficient thermal management in applications.
The operating temperature ranges from -55°C to 175°C, making it suitable for harsh environments.
The on-resistance is 111 mΩ at maximum rating, ensuring efficient conduction and power handling.
The forward voltage drop is specified at -1.2 V, optimizing conduction efficiency.
It features an enhancement channel mode, which assures reliable switching performance.
The maximum gate-source voltage rating is 20 V, which helps to prevent gate damage during operation.
This MOSFET is used in battery management systems, load switch functions, and reverse polarity protection in various industrial and commercial environments.
The Infineon IPD11DP10NMATMA1 has a pin count of 3, suitable for surface mount applications.
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