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Infineon iPB Type P-Channel MOSFET, 62 A, 100 V, 3-Pin TO-263 IPB330P10NMATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB330P10NMATMA1 |
| Mount Type | Surface |
| Series | iPB |
| Package Type | TO-263 |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 62A |
| Maximum Drain Source Voltage Vds | 100V |
| Channel Mode | N |
Key Features
- The device is ideal for battery management and load switch applications.
- It provides easy MCU interface and fast switching performance.
- Avalanche ruggedness ensures reliability under demanding conditions.
- Low RDS(on) range improves efficiency at low load conditions.
- Industry-standard footprint enables broad compatibility.
- Suitable for both high and low switching frequency applications.
- Robust and reliable performance for industrial automation.
- Surface mount package allows efficient PCB assembly.
Product Description
Infineon IPB330P10NMATMA1 is a state-of-the-art P-Channel MOSFET designed with OptiMOS™ technology, delivering a maximum continuous drain current of 62 A and capable of withstanding a maximum drain-source voltage of 100 V. Packaged in a compact 3-pin TO-263 surface mount form factor, this MOSFET is tailored for battery management systems, load switches, and reverse polarity protection, offering simplified design and high efficiency.
The device features fast switching speeds and avalanche ruggedness, ensuring high reliability and durability in industrial and automotive electronic applications. With a wide range of RDS(on) values, it provides improved energy efficiency, especially at low load conditions, contributing to overall system performance enhancement.
This MOSFET's industry-standard footprint facilitates easy integration on printed circuit boards within industrial automation, power management, and electronic control systems. Its compatibility with MCUs simplifies control circuit design by providing a straightforward interface.
Robust and reliable, the Infineon IPB330P10NMATMA1 offers secure operation in demanding environments and is especially suited for applications requiring both low and high switching frequencies. This product combines performance, efficiency, and ease of assembly for advanced industrial electronic designs.
The device is ideal for battery management and load switch applications. Provides easy MCU interface and fast switching performance. Avalanche ruggedness ensures reliability under demanding conditions. Low RDS(on) range improves efficiency at low load conditions.
Industry-standard footprint enables broad compatibility. Suitable for both high and low switching frequency applications. Robust and reliable performance for industrial automation. Surface mount package allows efficient PCB assembly.
Designed as a normal level MOSFET with wide operational capabilities. Explore more in the Electronics & Electricals category at EnvMart to find compatible components and accessories for your projects.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IPB330P10NMATMA1 is 62 A.
This MOSFET can withstand a maximum drain-source voltage of 100 V.
The Infineon IPB330P10NMATMA1 is packaged in a 3-pin TO-263 surface mount form factor.
It is ideal for battery management systems, load switches, and reverse polarity protection applications.
This MOSFET has a pin count of 3.
The low RDS(on) range improves efficiency at low load conditions, contributing to overall system performance enhancement.
Yes, it is suitable for both high and low switching frequency applications.
This MOSFET is designed with OptiMOS™ technology, which enhances its performance characteristics.
The Infineon IPB330P10NMATMA1 is manufactured in India.
This model features a P-channel type.
It uses a surface mount type for efficient PCB assembly.
This device belongs to the iPB series by Infineon.
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