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Infineon HEXFET Type P-Channel MOSFET, 3.6 A, 30 V, Enhancement Mode, 3-Pin SOT-23 IRLML9301TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.02mm
Length 3.04mm
Model IRLML9301TRPBF
Width 1.4mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 3.6A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 64mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.3W
Typical Gate Charge Qg @ Vgs 4.8nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • Operates in enhancement mode for efficient switching control.
  • Low drain-source resistance of 64 milliohms reduces heat generation.
  • Supports maximum power dissipation of 1.3 watts.
  • Wide operating temperature range from -55°C to +150°C ensures reliability.
  • Compact surface mount SOT-23 package enables easy PCB integration.
  • Typical gate charge of 4.8 nanocoulombs allows fast switching.
  • Maximum gate-source voltage rating of ±20 volts protects gate integrity.
  • Suited for power management in portable electronics and automation.

Product Description

The Infineon IRLML9301TRPBF is a HEXFET Type P-Channel MOSFET designed for efficient power management in compact and high-performance electronic applications. This device features an enhancement mode channel capable of handling a maximum continuous drain current of 3.6 amperes and a maximum drain-source voltage of 30 volts. Its surface mount 3-pin SOT-23 package allows for straightforward integration into densely packed circuit boards.

With a low on-resistance of 64 milliohms, this MOSFET minimizes heat generation under load, which enhances overall circuit efficiency and contributes to prolonged component life. Its typical gate charge of 4.8 nanocoulombs supports fast switching speeds, while the maximum gate-source voltage rating of ±20 volts ensures robust gate protection.

This component operates reliably over a wide temperature range, from -55°C to +150°C, making it suitable for applications subjected to harsh environmental or thermal conditions. The maximum power dissipation is rated at 1.3 watts, providing sufficient margin for typical low to moderate power designs.

Common applications for this MOSFET include power management in portable gadgets, automation control systems, audio amplifiers, and signal processing circuits. It is also well-suited for DC-DC converters utilized in renewable energy setups and motor driving in robotics, highlighting its versatility in industrial and consumer electronics.

Operates in enhancement mode for efficient switching control. Low drain-source resistance reduces heat and improves efficiency. Wide operating temperature range from -55°C to 150°C enhances reliability. Compact SOT-23 surface mount package for easy PCB layout.

High gate-source voltage tolerance protects device in harsh conditions. Typical gate charge ensures responsive switching performance. Power dissipation suitable for moderate load applications. Ideal for portable electronics and automation systems.

Supports audio, signal processing, DC-DC conversion, and robotics uses.

Choose the Infineon IRLML9301TRPBF HEXFET MOSFET for a highly reliable and efficient power management solution. Explore more semiconductors and MOSFETs on EnvMart to find the ideal components for your industrial, laboratory, automotive, and electronic design projects.

Infineon HEXFET Type P-Channel MOSFET, 3.6 A, 30 V, Enhancement Mode, 3-Pin SOT-23 IRLML9301TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 3.6 amperes.

This MOSFET has a maximum drain-source voltage rating of 30 volts.

The typical gate charge for this model is 4.8 nanocoulombs.

It comes in a compact SOT-23 surface mount package.

The operating temperature range is from -55°C to +150°C.

The maximum power dissipation for this MOSFET is rated at 1.3 watts.

It features a low drain-source resistance of 64 milliohms.

The height of this model is 1.02 mm.

The width is 1.4 mm and the length is 3.04 mm.

This model uses a Type P channel.

It is suited for power management in portable electronics, automation control systems, and DC-DC converters.

The maximum gate-source voltage rating is ±20 volts.

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