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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 3mm |
| Model | DNBT8105-7 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | DNBT8105 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 30 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 80V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 600mW |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
DiodesZetex DNBT8105-7 is a high-reliability NPN bipolar transistor designed for general-purpose amplification and switching applications. It features a maximum continuous collector current of 1 A and a collector emitter voltage rating of 60 V, offering robust performance in a compact 3-pin SOT-23 surface mount package. This transistor is widely used in industrial, automotive, and electronic circuit applications requiring efficient switching and amplification under moderate power conditions.
The device supports a maximum power dissipation of 600 mW, ensuring stable operation within its thermal limits. Its minimum DC current gain (hFE) is 30, which provides effective signal amplification. Temperature operation ranges from -55°C to 150°C, making it suitable for automotive-grade and harsh environment usage.
Physically, the DNBT8105-7 has dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height, making it well-suited for compact PCB layouts. The transistor’s electrical limits include a maximum collector base voltage of 80 V and an emitter base voltage of 5 V.
This transistor meets the AEC-Q101 automotive standard, ensuring quality and reliability required for demanding automotive and industrial applications. Its surface mount configuration allows for efficient automated PCB assembly, enhancing manufacturing throughput and consistency.
This transistor supports a maximum power dissipation of 600 mW. Minimum DC current gain of 30. Maximum collector base voltage of 80 V and emitter base voltage of 5 V. Operating temperature range from -55°C to 150°C for harsh environment resilience.
Compact dimensions of 3 x 2.5 x 1.1 mm suitable for surface mount applications. Meets AEC-Q101 automotive standard for high reliability. Single transistor configuration with NPN polarity for versatile applications.
Ideal for use in automotive electronics, industrial controls, telecommunication equipment, and other embedded systems requiring efficient switching and amplification. Environmentally compliant with RoHS standards.
Explore more products in the Bipolar Transistors category on EnvMart for diverse electronic component needs.
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