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DiodesZetex PNP Transistor , Max DC Collector Current 100 mA, Max Collector Emitter Voltage 45 V, SOT-23, 3-Pin BC857B-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BC857B-7-F
Width 2.5mm
Mount Type Surface
Series BC857B
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz

Key Features

  • Suitable for surface mounting on printed circuit boards.
  • Operates with a transistor configuration of single PNP type.
  • Supports a maximum power dissipation of 300 mW for reliable operation.
  • Wide operating temperature range from -55°C to 150°C ensures versatility.
  • Designed for automotive applications meeting AEC-Q100, AEC-Q101, and AEC-Q200 standards.
  • Features a minimum DC current gain of 220 for efficient amplification.
  • Maximum transition frequency of 200 MHz enables high-frequency applications.
  • Three-pin SOT-23 package facilitates easy integration in electronic circuits.

Product Description

DiodesZetex BC857B-7-F PNP Transistor is a high-performance small signal transistor suitable for various electronic applications in industrial, automotive, and consumer electronics sectors. It features a maximum DC collector current of 100 mA and can withstand a maximum collector emitter voltage of 45 V, allowing it to operate efficiently in low to medium power switching and amplification tasks.

The transistor is housed in a compact SOT-23 package with three pins, making it ideal for surface mount technology (SMT) circuits where space optimization is crucial. It supports a maximum power dissipation of 300 mW, ensuring stable operation under typical conditions.

The device is designed to endure a wide temperature range, from -55°C to 150°C, making it highly reliable for harsh environmental conditions including automotive applications. It complies with automotive standards such as AEC-Q100, AEC-Q101, and AEC-Q200, further confirming its suitability for rigorous use cases.

The BC857B-7-F transistor exhibits a minimum DC current gain (hFE) of 220 and a maximum transition frequency of 200 MHz, facilitating effective high-frequency switching and amplification tasks in electronic circuits.

Compact size with dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height enables design flexibility. Single PNP transistor configuration supports diverse circuit designs. Surface mount package type (SOT-23) allows automated PCB assembly and reduces manufacturing costs.

Suitable for industrial, automotive, telecommunications, and consumer electronic applications. Conforms to multiple automotive quality standards (AEC-Q100, AEC-Q101, AEC-Q200).

This transistor is ideal for engineers and designers looking to implement efficient and reliable PNP transistor functionality in compact electronic devices. Explore more components in the Bipolar Transistors category at EnvMart to complement your circuit designs.

DiodesZetex PNP Transistor , Max DC Collector Current 100 mA, Max Collector Emitter Voltage 45 V, SOT-23, 3-Pin BC857B-7-F
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It can withstand a maximum collector-emitter voltage of 45 V.

The maximum power dissipation for this unit is 300 mW.

This transistor operates within a temperature range of -55°C to 150°C.

It exhibits a minimum DC current gain (hFE) of 220.

The maximum transition frequency is 200 MHz, suitable for high-frequency applications.

It is housed in a compact SOT-23 package with three pins, ideal for surface mounting.

This model meets AEC-Q100, AEC-Q101, and AEC-Q200 automotive standards.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It supports a single PNP transistor configuration, allowing for diverse circuit designs.

The maximum emitter-base voltage (VEBO) is 5 V.

The country of origin for this transistor is India.

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