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Vishay Silicon Junction Silicon Switching Diode 150 mA 100 V SOT-23 BAV99-E3-08

Category Discrete Semiconductors Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 1.05mm
Length 3.1mm
Model BAV99-E3-08
Width 1.43mm
Mount Type Surface
Maximum Operating Temperature 150°C
Case DO-204AL, molded epoxy over glass body
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Polarity Color band denotes cathode end
Terminals Matte tin plated leads, solderable per
Pin Count 3
Maximum Power Dissipation Pd 300mW
Diode Configuration Series
Peak Non-Repetitive Forward Surge Current Ifsm 4.5A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 6ns
Maximum Forward Current If 150mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V

Key Features

  • Designed with a superectifier structure for high reliability conditions.
  • Features a cavity-free glass-passivated junction for enhanced durability.
  • Provides fast switching capability with typical peak reverse recovery time of 6 ns.
  • Low leakage current typically less than 0.2 μA ensuring minimal power loss.
  • Supports high forward surge current up to 4.5 A for surge protection.
  • Operating temperature range from -55°C up to 150°C for broad application scope.
  • Constructed with DO-204AL molded epoxy over glass body meeting UL 94 V-0 flammability rating.
  • Terminals are matte tin plated, solderable per industry standards for secure connections.

Product Description

Vishay BAV99-E3-08 is a high-performance Silicon Junction switching diode designed for demanding electronic applications. This diode supports a maximum forward current of 150 mA and withstands peak reverse voltages up to 100 V, housed in a compact 3-pin SOT-23 surface-mount package.

The diode utilizes a superectifier structure that provides exceptional reliability under high-stress conditions. It features a cavity-free glass-passivated junction that enhances durability and long-term stability. The device enables fast switching operations with a peak reverse recovery time of only 6 nanoseconds, making it suitable for high-frequency switching circuits.

Low leakage current, typically under 0.2 μA, ensures energy efficiency with minimal loss during operation. The diode can handle high forward surge currents of up to 4.5 A, providing robust protection against surge events.

Its small form factor with precise mechanical dimensions (3.1 mm length, 1.43 mm width, and 1.05 mm height) allows integration into compact electronic assemblies. The operating temperature range from -55°C to 150°C supports a wide variety of environmental conditions.

The diode’s case is made of DO-204AL molded epoxy over a glass body, compliant with UL 94 V-0 flammability classification, ensuring safety and reliability. Terminals are matte tin plated and solderable according to J-STD-002 and JESD 22-B102 standards, guaranteeing consistent solder joints.

Typical industrial applications include high voltage rectification for G2 grids in cathode-ray tubes (CRT) and televisions, as well as snubber circuits in camera flashes, providing efficient switching and protection. This component is ideal for use in various electronic, industrial, and commercial electronic equipment requiring reliable high-speed switching diodes.

Designed with a superectifier structure for high reliability conditions. Features a cavity-free glass-passivated junction for enhanced durability. Provides fast switching capability with typical peak reverse recovery time of 6 ns.

Low leakage current typically less than 0.2 μA ensuring minimal power loss. Supports high forward surge current up to 4.5 A for surge protection. Compact dimensions: 3.1 mm length, 1.43 mm width, and 1.05 mm height. Operating temperature range from -55°C up to 150°C for broad application scope.

Constructed with DO-204AL molded epoxy over glass body meeting UL 94 V-0 flammability rating. Terminals are matte tin plated, solderable per industry standards for secure connections. Commonly used for high voltage rectification in CRT/TV grids and snubber circuits of camera flashes.

Explore more components and solutions in our Electronics & Electricals category to support your industrial and commercial projects.

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Vishay Silicon Junction Silicon Switching Diode 150 mA 100 V SOT-23 BAV99-E3-08
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Frequently Asked Questions

The maximum forward current for the BAV99-E3-08 is 150 mA.

This diode features a typical peak reverse recovery time of 6 nanoseconds.

The operating temperature range for the BAV99-E3-08 is from -55°C to 150°C.

The maximum peak reverse voltage for this model is 100 V.

This diode has dimensions of 3.1 mm in length, 1.43 mm in width, and 1.05 mm in height.

The BAV99-E3-08 is housed in a compact SOT-23 surface-mount package.

It can handle a maximum forward surge current of up to 4.5 A.

The diode is constructed with a DO-204AL molded epoxy over a glass body, compliant with UL 94 V-0 flammability rating.

The typical leakage current is less than 0.2 μA, ensuring minimal power loss.

The polarity of this diode is indicated by a color band that denotes the cathode end.

The terminals are matte tin plated and solderable according to J-STD-002 and JESD 22-B102 standards.

Common applications include high voltage rectification for G2 grids in cathode-ray tubes and snubber circuits in camera flashes.

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