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Nexperia N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN PMXB56ENZ

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Nexperia N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN PMXB56ENZ

Name: Nexperia N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN PMXB56ENZ
Brand: Nexperia
SKU: 215037
Price: 0.18 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	360μm
Length	1.15mm
Model	PMXB56ENZ
Width	1.05mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	DFN
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	3.2A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	87mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	8.33W
Typical Gate Charge Qg @ Vgs	3.6nC
Maximum Gate Source Voltage Vgs	20V
Leadless ultra small and thin SMD plastic package	1.1 x 1.0 x 0.37 mm

Key Features

Maximum continuous drain current of 3.2 A supports efficient power handling.
Drain-source voltage rating of 30 V ensures suitability for moderate voltage circuits.
Low on-state resistance of 87 mΩ minimizes conduction losses.
Compact 4-pin DFN package measures approximately 1.15 mm by 1.05 mm by 0.36 mm.
Wide operating temperature range from -55°C to 150°C supports harsh industrial environments.
Fast switching characteristics are ideal for power management and DC-DC converters.
Typical gate charge of 3.6 nC facilitates efficient gate drive.
Features an exposed drain pad for excellent thermal conduction and heat dissipation.

Product Description

The Nexperia PMXB56ENZ is a high-performance N-Channel MOSFET designed using advanced trench MOSFET technology for power-critical applications. This enhancement mode transistor operates with a maximum continuous drain current of 3.2 A and a maximum drain-source voltage of 30 V, making it suitable for a wide range of electronic and industrial uses.

Packaged in a leadless ultra-small DFN1010D-3 (SOT1215) surface-mount device format, its compact dimensions (1.15 mm length, 1.05 mm width, and 360 μm height) enable efficient space-saving designs. The package features an exposed drain pad, which significantly enhances thermal conduction, allowing high power dissipation of up to 8.33 W.

The device's low on-resistance RDS(on) of 87 milliohms reduces power loss and improves efficiency during switching. It supports a maximum gate-source voltage of 20 V and typical gate charge of 3.6 nanocoulombs, ensuring fast switching speeds suitable for DC-to-DC converters and other power management circuits.

Operating reliably across temperatures ranging from -55°C to 150°C, this MOSFET is well-suited for industrial, consumer electronics, automotive, and portable device applications. Typical usage includes low-side load switching, battery management, LED driving, and efficient power conversion.

The robust construction and trench technology ensure excellent safe operating area (SOA) performance, providing dependable operation even in demanding conditions. Maximum continuous drain current: 3.2 A. Drain-source voltage: 30 V.

Package: Leadless 4-pin DFN, 1.15×1.05×0.36 mm. Drain-source on-state resistance: 87 mΩ. Maximum power dissipation: 8.33 W. Operating temperature range: -55°C to 150°C. Typical gate charge: 3.6 nC. Exposed drain pad for improved thermal performance.

Power management, LED drivers, portable devices. Explore Nexperia products and other semiconductor devices on EnvMart for reliable components suited to your electronic design and manufacturing needs.