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Nexperia N-Channel MOSFET LFPAK Surface Mount 25A 40V Enhancement Mode 5-Pin BUK9Y29-40E,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.05mm |
| Length | 5mm |
| Model | BUK9Y29-40E,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Series | BUK9Y2940E |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 58.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 37W |
| Typical Gate Charge Qg @ Vgs | 5nC |
| Maximum Gate Source Voltage Vgs | 15V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed with TrenchMOS technology for high efficiency.
- Supports maximum continuous drain current of 25 A.
- Maximum drain-source voltage rated at 40 V.
- Surface mount package type LFPAK for compact design.
- Operates within -55°C to 175°C temperature range.
- Typical gate charge of 5 nC at Vgs.
- Meets AEC-Q101 standard for automotive applications.
- Suitable for high performance automotive and industrial use.
Product Description
Nexperia BUK9Y29-40E,115 is a high-performance N-channel MOSFET featuring a 25 amperes maximum continuous drain current and a drain-source voltage of 40 volts. It is packaged in a compact 5-pin LFPAK surface mount package, optimized using TrenchMOS technology to ensure low resistance and efficient switching.
This device operates in enhancement mode and has a low typical gate charge of 5 nanocoulombs at gate-source voltage, aiding fast switching in power electronics applications. With a maximum power dissipation of 37 watts, it is suitable for use in demanding environments, including automotive systems compliant with AEC-Q101 standards.
The MOSFET can endure operating temperatures from -55°C up to 175°C, suitable for thermally demanding industrial or automotive environments. The maximum gate-source voltage rating is 15 volts with a forward voltage drop of 1.2 volts.
Its compact dimensions (5 mm length, 4.1 mm width, and 1.05 mm height) make it suitable for densely packed circuit boards and applications requiring surface mount devices.
Industrial applications include motor control, lamp and solenoid drivers, and transmission control in automotive systems, as well as high-performance power switching in various electronic systems.
Designed with TrenchMOS technology for high efficiency. Supports maximum continuous drain current of 25 A. Maximum drain-source voltage rated at 40 V. Surface mount package type LFPAK for compact design. Operates within -55°C to 175°C temperature range.
Typical gate charge of 5 nC at Vgs. Meets AEC-Q101 standard for automotive applications. Suitable for high performance automotive and industrial use. Maximum power dissipation of 37 W. Dimensions: Length 5 mm, Width 4.1 mm, Height 1.05 mm.
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Frequently Asked Questions
The maximum continuous drain current for this model is 25 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
The typical gate charge at gate-source voltage for this unit is 5 nC.
The dimensions of the LFPAK package are 5 mm in length, 4.1 mm in width, and 1.05 mm in height.
It operates within a temperature range of -55°C to 175°C.
The maximum power dissipation for this model is 37 W.
This device meets the AEC-Q101 standard for automotive applications.
The maximum gate-source voltage rating for this model is 15 V.
This MOSFET features an N-channel design.
It is suitable for high-performance automotive and industrial applications, including motor control and power switching.
The forward voltage drop for this model is 1.2 V.
The maximum drain-source resistance is rated at 58.3 mΩ.
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