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Nexperia P-Channel MOSFET, -5.6 A, -20 V Enhancement Mode, 3-Pin SOT-23 Surface Mount PMV27UPEAR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 3mm |
| Model | PMV27UPEAR |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | -5.6A |
| Maximum Drain Source Voltage Vds | -20V |
| Maximum Drain Source Resistance Rds | 63mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 4.15W |
| Typical Gate Charge Qg @ Vgs | 14.7nC |
| Maximum Gate Source Voltage Vgs | 8V |
Key Features
- This MOSFET features a maximum continuous drain current of -5.6 A.
- It supports a maximum drain-source voltage of -20 V suitable for low voltage applications.
- Equipped with an enhancement mode channel for reliable switching.
- The package type is compact SOT-23 with a 3-pin surface mount configuration.
- It has a low maximum drain-source resistance of 63 mΩ for reduced power loss.
- This device operates reliably across a temperature range from -55°C to 150°C.
- The maximum power dissipation is 4.15 W, allowing for moderate thermal conditions.
- Typical gate charge is 14.7 nC at standard gate voltage, enabling fast switching performance.
Product Description
Nexperia PMV27UPEAR is a P-Channel enhancement mode MOSFET, designed for surface mounting with a 3-pin SOT-23 package. It supports a maximum continuous drain current of -5.6 A and a maximum drain-source voltage of -20 V, making it ideal for efficient power switching in a wide range of electronic applications.
The device utilizes advanced Trench MOSFET technology, offering a low threshold voltage and very fast switching capabilities. Its enhancement mode channel ensures reliable operation in power management circuits, including LED drivers, high-side load switches, and switching circuits.
The PMV27UPEAR is capable of handling a maximum power dissipation of 4.15 W and operates reliably over a broad temperature range from -55°C to 150°C. It features a low maximum drain-source resistance of 63 mΩ and a typical gate charge of 14.7 nC, which supports low power losses and fast response, crucial for high-efficiency designs.
This MOSFET package measures 3 mm in length, 1.4 mm in width, and 1 mm in height, and is compliant with the automotive standard AEC-Q101, ensuring suitability for automotive and industrial industrial environments.
Maximum continuous drain current of -5.6 A. Maximum drain-source voltage of -20 V. Enhancement mode operation for reliable switching. Surface mount SOT-23 package with 3 pins. Low maximum drain-source resistance of 63 mΩ.
Maximum power dissipation of 4.15 W. Operating temperature range from -55°C to 150°C. Typical gate charge of 14.7 nC. AEC-Q101 automotive qualification.
Applications include power management, LED drivers, high-side load switches, and various switching circuits in industrial, automotive, and consumer electronics. This MOSFET offers a compact, efficient solution for designers requiring reliable performance from a trusted semiconductor brand.
Explore more semiconductor components and MOSFETs from Nexperia and other leading brands on EnvMart to find the ideal components for your next design project.
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Frequently Asked Questions
The maximum continuous drain current for this model is -5.6 A.
It supports a maximum drain-source voltage of -20 V.
This model comes in a compact SOT-23 package with a 3-pin surface mount configuration.
The maximum power dissipation is 4.15 W.
It operates reliably across a temperature range from -55°C to 150°C.
The typical gate charge is 14.7 nC at standard gate voltage.
It has a low maximum drain-source resistance of 63 mΩ.
This model is compliant with the automotive standard AEC-Q101.
It is suitable for applications such as power management, LED drivers, high-side load switches, and various switching circuits.
The maximum gate-source voltage is 8 V.
The dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height.
It features a P-Channel enhancement mode channel for reliable switching.
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