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Nexperia N-Channel MOSFET 270 mA 60 V Enhancement Mode 3-Pin SOT-23 NX7002BKR

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Nexperia N-Channel MOSFET 270 mA 60 V Enhancement Mode 3-Pin SOT-23 NX7002BKR

Name: Nexperia N-Channel MOSFET 270 mA 60 V Enhancement Mode 3-Pin SOT-23 NX7002BKR
Brand: Nexperia
SKU: 214862
Price: 0.04 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1mm
Length	3mm
Model	NX7002BKR
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	270mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	2.8Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.67W
Typical Gate Charge Qg @ Vgs	1nC
Maximum Gate Source Voltage Vgs	20V

Key Features

This MOSFET uses trench technology for fast switching performance.
It features enhancement mode operation with a maximum gate-source voltage of 20 V.
The device supports surface mount technology in a small SOT-23 plastic package.
Maximum power dissipation capability is 1.67 W with operating temperatures from -55°C to 150°C.
Typical gate charge is low at 1 nC, enabling efficient switching behavior.
The MOSFET offers electrostatic discharge protection above 2 kV HBM.
Manufactured in China, designed for logic- and standard-level applications in power-critical electronic circuits.

Product Description

Nexperia NX7002BKR is an N-channel enhancement mode MOSFET with a maximum continuous drain current of 270 mA and a drain-source voltage rating of 60 V. Housed in a compact 3-pin SOT-23 surface-mount plastic package, it is an ideal choice for space-constrained and power-efficient electronic designs.

This MOSFET utilizes trench MOSFET technology to deliver fast switching speeds and excellent safe operating area characteristics, making it suitable for a range of power management, signal switching, and load driving applications in consumer electronics, industrial controls, and automation systems.

The device operates with a maximum gate-source voltage of 20 V and supports power dissipation up to 1.67 W, ensuring reliable performance under various thermal conditions. Its operational temperature range spans from -55°C to 150°C, providing robustness against harsh environmental conditions encountered in industrial and automotive environments.

With a typical gate charge of just 1 nC, the NX7002BKR allows for efficient switching, which is crucial for reducing power loss in high-frequency circuits. The electrostatic discharge protection exceeds 2 kV on the Human Body Model (HBM) scale, enhancing device reliability during handling and operation.

The MOSFET’s physical dimensions are compact, measuring 1.4 mm in width, 1 mm in height, and 3 mm in length, making it well suited for modern surface-mount PCB assembly processes. It is manufactured in China adhering to quality standards consistent with Nexperia’s product portfolio.

This transistor is widely used in industrial electronics, instrumentation, telecommunications, automotive electronics, and consumer devices where efficient and reliable low power switching is essential.

Uses trench MOSFET technology for enhanced switching performance. Compact SOT-23 surface mount package with 3 pins. Rated voltage of 60 V and continuous drain current of 270 mA. Low typical gate charge of 1 nC for efficient operation.

Wide operating temperature range from -55°C to 150°C. Power dissipation up to 1.67 W ensures robust performance. Electrostatic discharge protection greater than 2 kV HBM. Ideal for power-critical and space-constrained applications.

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