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Vishay Silicon Junction Switching Diode, Single, 200 mA, 2-Pin DO-35, 250 mV, 250 mW, Fast Switching BAV21-TAP

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Vishay Silicon Junction Switching Diode, Single, 200 mA, 2-Pin DO-35, 250 mV, 250 mW, Fast Switching BAV21-TAP

Name: Vishay Silicon Junction Switching Diode, Single, 200 mA, 2-Pin DO-35, 250 mV, 250 mW, Fast Switching BAV21-TAP
Brand: Vishay
SKU: 214425
Price: 0.05 USD
Availability: InStock

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Category Discrete Semiconductor Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	1.7mm
Length	3.9mm
Model	BAV21-TAP
Width	1.7mm
Mount Type	Through Hole
Maximum Operating Temperature	175°C
Case	DO-204AL, molded epoxy over glass body
Package Type	DO-35
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Polarity	Color band denotes cathode end
Terminals	Matte tin plated leads, solderable per
Pin Count	2
Maximum Power Dissipation Pd	250mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	1A
Maximum Forward Voltage Vf	1V
Peak Reverse Recovery Time trr	50ns
Maximum Forward Current If	200mA
Maximum Peak Reverse Repetitive Voltage Vrrm	250mV

Key Features

Single silicon junction diode with fast switching capability.
Maximum forward current rating of 200 mA.
DO-35 through-hole package ensuring robust mounting.
Glass-passivated junction for long-term reliability.
Maximum power dissipation of 250 mW for efficient operation.
Peak reverse recovery time of 50 ns enhancing switching speed.
Operating temperature range from -65°C to 175°C suits harsh environments.
Low leakage current typically less than 0.2 μA for high efficiency.

Product Description

Vishay BAV21-TAP silicon junction switching diode is designed for high reliability and fast switching in electronics applications. Featuring a single junction configuration, this diode supports a maximum forward current of 200 mA with a peak reverse voltage rating of 250 mV. Packaged in a DO-35 glass body, the device ensures durability and stable operation under demanding conditions.

The diode utilizes a superrectifier structure with cavity-free glass passivation, delivering high surge capability and a low typical leakage current below 0.2 μA. Its peak reverse recovery time of 50 ns makes it suitable for fast switching circuits, enhancing overall electrical efficiency and performance.

With an operating temperature range from -65°C up to 175°C, the BAV21-TAP is well suited for applications in industrial, consumer electronics, and telecommunications devices. The sealed mold epoxy provides UL 94 V-0 flammability rating for safety compliance.

Typical applications include high voltage rectification in CRT and TV G2 grids, camera flash snubber circuits, and other fast switching electronic circuits. The diode’s matte tin plated leads meet solderability standards J-STD-002 and JESD 22-B102, assuring reliable PCB assembly.

Single silicon junction diode with fast switching characteristic. Maximum continuous forward current of 200 mA. Robust DO-35 package with glass passivation ensures long service life. Low leakage current increases circuit efficiency.

Peak reverse recovery time supports high-speed switching. Wide operating temperature range for versatile environments. Solder-friendly matte tin plated terminals. Color band polarity marking for correct installation. Meets commercial grade RoHS compliance.

This product is ideal for electronic circuit designers and manufacturers requiring reliable switching diodes with excellent thermal and electrical performance. For more electronic components and semiconductor products, explore the Electronics & Electricals category on EnvMart.

Explore more products in our Discrete Semiconductor category.