Vishay Silicon Junction Single Switching Diode 300 mA 75 V 2-Pin SOD-80 LL4448-GS08

Vishay LL4448-GS08 is a high-performance silicon junction switching diode designed for fast switching and high reliability. It supports a maximum forward current of 300 mA and can withstand peak repetitive reverse voltages up to 75 V. Packaged in a compact 2-pin SOD-80 envelope measuring 1.6 mm in height, length, width, and diameter, it features a glass-passivated junction ensuring minimal leakage current and long service life.

The diode uses a superectifier structure for enhanced reliability and stability. The glass-passivated cavity-free junction minimizes leakage current typically below 0.2 μA, while providing excellent forward surge current handling capabilities, rated at 2 A peak non-repetitive surge.

With a peak reverse recovery time of 4 ns, the LL4448-GS08 supports fast switching applications crucial for power electronics and signal rectification. The device operates efficiently over a wide ambient temperature range from -65°C to 175°C, making it suitable for demanding industrial and consumer electronics environments.

The diode's case is constructed from molded epoxy over a glass body (DO-204AL type), rated to a UL 94 V-0 flammability standard, ensuring mechanical robustness and durability. Leads are matte tin plated and fully solderable per industry standards J-STD-002 and JESD 22-B102, assuring reliable PCB mountability. The cathode is clearly identified by a color band for correct orientation during assembly.

Typical applications include high voltage rectification tasks in G2 grid circuits of CRT and television sets, as well as snubber circuits in camera flashes where fast switching and low leakage are essential. Its high forward surge capability and compact size enable usage in modern electronic designs requiring dependable diode performance.

Features a superectifier structure ensuring high reliability under operational conditions. Glass-passivated cavity-free junction minimizes leakage current. Fast switching with a peak reverse recovery time of 4 ns. Maximum forward current of 300 mA and peak reverse voltage of 75 V.

Compact DO-204AL epoxy package with matte tin plated leads. Wide operating temperature range from -65°C to 175°C. High forward surge current rating of 2 A for transient conditions. Polarity marked by a color band denoting cathode end.

This Vishay silicon junction diode LL4448-GS08 represents a reliable choice for industrial, consumer electronics, and laboratory power rectification needs. It delivers efficient switching performance and durability required in semiconductor discrete components. Browse Vishay products and related semiconductor components in the EnvMart catalog for more options and technical solutions.

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