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onsemi PNP Transistor 3-Pin SOT-23, 100 mA Collector Current, 45 V Collector-Emitter Voltage BC857CLT1G

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onsemi PNP Transistor 3-Pin SOT-23, 100 mA Collector Current, 45 V Collector-Emitter Voltage BC857CLT1G

Name: onsemi PNP Transistor 3-Pin SOT-23, 100 mA Collector Current, 45 V Collector-Emitter Voltage BC857CLT1G
Brand: onsemi
SKU: 212571
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	2.64mm
Length	3.04mm
Model	BC857CLT1G
Width	1.11mm
Mount Type	Surface
Series	BC856ALT1G
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-45V
Minimum DC Current Gain hFE	420
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	50V
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	-100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
Nexperia BC857C,215 Transistor, 100 mA PNP, 45 V, 3-Pin SOT-23Brand	Nexperia

Key Features

This single configuration transistor supports surface mount applications with a compact SOT-23 package.
It features a maximum power dissipation of 300 mW suitable for low power electronic circuits.
With a maximum transition frequency of 100 MHz, it offers fast switching capabilities.
The device operates reliably across temperatures ranging from -55°C to 150°C.
The transistor has a high current gain (hFE) of at least 420, enhancing signal amplification.
It has a 3-pin design, facilitating easy integration on printed circuit boards.
Rated for a maximum collector-base voltage of 50 V and emitter-base voltage of 5 V.
Suitable for general purpose low noise amplification and switching applications in electronic circuitry.

Product Description

onsemi BC857CLT1G PNP Transistor 3-Pin SOT-23 is a high-performance bipolar transistor designed for efficient low power signal amplification and switching in a compact SOT-23 package. It provides a maximum collector current of 100 mA with a collector-emitter voltage capable of up to 45 V, making it ideal for various precision electronic component applications.

The transistor features a single configuration with surface mount design enabling compact assembly on printed circuit boards in consumer electronics, industrial controls, and communication devices. It dissipates up to 300 mW power, allowing use in diverse low-power circuits.

Operating over an extended temperature range from -55°C to 150°C ensures reliability under harsh environmental conditions in automotive, industrial, and commercial electronics.

The device delivers a high current gain (hFE) of 420, which enhances signal amplification performance at frequencies up to 100 MHz, supporting fast switching and low noise operation.

Its 3-pin layout and robust voltage ratings make it versatile for discrete bipolar transistor needs including signal amplification, switching, and buffer stages within industrial, laboratory, telecommunications, and electronic manufacturing applications.

This PNP transistor supports surface mount technology in a small footprint. Maximum DC collector current is 100 mA suitable for moderate load applications. Maximum collector-emitter voltage is 45 V allowing medium voltage switching.

High gain and frequency response for effective signal handling. Extended operating temperature range ensures durability in variable conditions. Compact 3-pin SOT-23 package for efficient PCB layout design. Reliable in automotive and industrial electronics environments.

Ideal for use in switching, amplification, and general-purpose discrete semiconductor roles.

Explore the extensive range of semiconductor components at EnvMart for industrial, laboratory, and manufacturing applications, including advanced Bipolar Transistors like the BC857CLT1G from onsemi.