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onsemi Dual NPN + PNP Transistor, 100 mA, 45 V, 6-Pin SOT-363 Surface Mount BC847BPDW1T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 2.2mm
Model BC847BPDW1T1G
Width 2.2mm
Mount Type Surface
Series BC847BPDW1
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 380mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz

Key Features

  • Dual transistor package contains one NPN and one PNP device for versatile applications.
  • Maximum DC collector current of 100 mA supports low-power circuits.
  • Collector-emitter voltage rating up to 45 V ensures reliable performance.
  • Surface mount SOT-363 package enables compact PCB designs.
  • High minimum current gain hFE of 200 improves amplification efficiency.
  • Wide operating temperature range from -55°C to 150°C for robust use.
  • Maximum power dissipation up to 380 mW supports moderate power applications.
  • Automotive AEC-Q101 standard ensures quality and reliability.

Product Description

onsemi BC847BPDW1T1G is a dual bipolar transistor package containing isolated NPN and PNP transistors designed for use in low-power amplifier and switching applications. It supports a maximum DC collector current of 100 mA and a maximum collector-emitter voltage of 45 V, packaged in a compact 6-pin SOT-363 surface mount type suitable for high-density PCB assembly.

This transistor achieves a minimum current gain (hFE) of 200, providing efficient signal amplification. Its maximum power dissipation rating of 380 mW allows it to handle moderate power levels reliably.

The device operates reliably across a wide temperature range of -55°C to 150°C, making it suitable for industrial, automotive, and other demanding environments. It meets the automotive AEC-Q101 standard, assuring quality and robustness in automotive electronics.

With a maximum transition frequency (ft) of 100 MHz, this transistor can be utilized in high-frequency switching applications and general-purpose amplification in consumer, automotive, and industrial equipment.

The small form factor with dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height supports compact PCB layouts and surface mounting for mass production efficiency. Dual isolated NPN and PNP transistors in one package allowing versatile circuit designs.

Maximum collector current: 100 mA ensuring suitability for low-power applications. Collector-emitter voltage rated at 45 V for reliable switching and amplification. Surface mount SOT-363 package type for modern compact assembly.

Minimum current gain hFE of 200 ensures good device amplification. Wide operating temperature range from -55°C to 150°C suits industrial and automotive environments. Compliance with AEC-Q101 automotive standard guarantees durability.

Maximum power dissipation of 380 mW supports moderate thermal loads. High transition frequency of 100 MHz enables use in switching and RF applications. Compact physical dimensions facilitate space-saving PCB design.

This transistor is ideal for use in industrial electronics, automotive circuits, consumer electronics, and power management modules where compact size, reliable switching, and amplification are critical.

Browse the Electronics & Electricals > Discrete Semiconductors > Bipolar Transistors category at EnvMart for a wide range of similar high-quality semiconductor components.

onsemi Dual NPN + PNP Transistor, 100 mA, 45 V, 6-Pin SOT-363 Surface Mount BC847BPDW1T1G
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