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onsemi Silicon Junction Switching Diode Common Cathode 18 A 200 V Surface Mount TO-263 3-Pin MURB1620CTT4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.29mm |
| Model | MURB1620CTT4G |
| Width | 9.65mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Diode Configuration | Common Cathode |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 975mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 18A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Key Features
- Maximum forward current rating is 18 amperes.
- Peak reverse repetitive voltage is 200 volts.
- Equipped with a TO-263 package type and 3 pins.
- Peak reverse recovery time of 35 nanoseconds supports high-speed switching.
- Operating temperature range from -65°C to 175°C ensures durability in harsh conditions.
- Maximum forward voltage drop of 975 millivolts enhances efficiency.
- Compact dimensions with length 10.29 mm, width 9.65 mm, and height 4.83 mm.
- Capable of handling a peak non-repetitive forward surge current of 100 amperes.
Product Description
onsemi MURB1620CTT4G is a silicon junction switching diode featuring a common cathode configuration designed for surface mount applications in electronic circuit assemblies. This device operates with a maximum forward current of 18 A and a peak reverse repetitive voltage of 200 V, suitable for power rectification and switching tasks.
The diode package is TO-263 with 3 pins, optimized for efficient heat dissipation and compact PCB layouts. It demonstrates fast switching capability with a peak reverse recovery time (trr) of 35 ns, enabling use in high-frequency switching power supplies and converters.
Operating temperature ranges from -65°C to 175°C allow reliable performance in industrial and automotive environments. The maximum forward voltage drop of 975 mV ensures low conduction losses, improving overall system efficiency. The diode can withstand peak non-repetitive forward surge currents up to 100 A, suitable for transient load conditions.
Physical dimensions of the component are 10.29 mm in length, 9.65 mm in width, and 4.83 mm in height, fitting standard mounting footprints. The device is compliant with surface mount technology (SMT) processes for automated assembly.
This diode is commonly used in power management, switching regulators, and protection circuits across industrial, automotive, and electronic manufacturing sectors. Maximum forward current of 18 A for high load applications.
Fast 35 ns peak reverse recovery time for efficient switching. Wide operating temperature range of -65°C to 175°C for robust environments. Compact TO-263 3-pin surface mount package. Peak forward surge current up to 100 A enhances transient handling.
Low forward voltage drop improves energy efficiency. Explore similar high-performance Switching Diodes for industrial and automotive use at EnvMart.
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Frequently Asked Questions
The maximum forward current rating of this model is 18 amperes.
This diode has a peak reverse repetitive voltage of 200 volts.
The dimensions of the TO-263 package are 10.29 mm in length, 9.65 mm in width, and 4.83 mm in height.
It features a peak reverse recovery time of 35 nanoseconds, supporting high-speed switching applications.
The operating temperature range for this diode is from -65°C to 175°C.
The maximum forward voltage drop for this model is 975 millivolts, which enhances efficiency.
This diode can handle a peak non-repetitive forward surge current of up to 100 amperes.
It has a common cathode configuration, suitable for surface mount applications.
This model supports surface mounting, optimized for efficient heat dissipation.
It is commonly used in power management, switching regulators, and protection circuits across industrial and automotive sectors.
The MURB1620CTT4G has a pin count of 3.
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