$1.80
$1.74
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon N-Channel TrenchStop IGBT Transistor 600 V 53 A 200 W TO-247 3-Pin Through Hole IKW30N60DTPXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKW30N60DTPXKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 1.13mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 53A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 200W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Features a 3-pin TO-247 package suitable for through hole mounting.
- Supports maximum power dissipation of 200 W ensuring robust operation.
- Maximum gate-emitter voltage rating is 20 V to protect drive circuits.
- Operates within temperature range from -40°C to 175°C for industrial applications.
- Low saturation voltage of 1.8 V enhances efficiency and minimizes losses.
- Incorporates TrenchStop technology for low EM interference and switching losses.
- Designed for high-speed switching up to 30 kHz frequency.
- Energy rating is 1.13 mJ, suitable for power electronics circuits.
Product Description
Infineon IKW30N60DTPXKSA1 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed with TrenchStop technology, providing high efficiency and fast switching capabilities. Rated at 600 V collector-emitter voltage and 53 A maximum continuous collector current, it targets demanding power electronics applications requiring reliable power switching.
The device is housed in a 3-pin TO-247 package, supporting through hole mounting for robust mechanical and electrical connection. Its maximum power dissipation of 200 W ensures it can handle substantial thermal loads in industrial environments.
The maximum gate-emitter voltage of 20 V allows compatibility with standard gate drive circuits while protecting against voltage spikes. Operating temperature range from -40°C to 175°C ensures durability under harsh conditions often encountered in manufacturing, HVAC, and automotive electronics systems.
With a low saturation voltage of 1.8 V, this IGBT reduces conduction losses and improves overall system efficiency. The built-in TrenchStop technology minimizes turn-off losses and short tail currents, helping reduce electromagnetic interference (EMI) and thermal stress during high-speed switching operations up to 30 kHz switching frequency.
The energy rating of 1.13 mJ allows this transistor to handle common energy loads in switching cycles, making it suitable for inverter, motor control, and power supply designs. Although not certified for automotive standards, it remains ideal for industrial and commercial power electronics applications.
3-pin TO-247 through hole mounting package. Maximum continuous collector current: 53 A. Maximum collector-emitter voltage: 600 V. Maximum power dissipation: 200 W. Maximum gate-emitter voltage: 20 V. Operating temperature: -40°C to 175°C.
Maximum collector-emitter saturation voltage: 1.8 V. TrenchStop technology for efficiency and EMI reduction. Not automotive standard compliant.
This IGBT transistor fits applications in industrial power electronics, manufacturing automation, motor drives, and HVAC systems. For reliable semiconductor components, browse the Infineon category at EnvMart for comprehensive solutions designed to meet demanding engineering requirements.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum collector-emitter voltage for this IGBT is 600 V.
This model has a maximum continuous collector current rating of 53 A.
It supports a maximum power dissipation of 200 W.
The operating temperature range is from -40°C to 175°C.
It is housed in a 3-pin TO-247 package suitable for through hole mounting.
The maximum gate-emitter voltage rating is 20 V.
The maximum collector-emitter saturation voltage is 1.8 V.
It incorporates TrenchStop technology, which enhances efficiency and minimizes electromagnetic interference.
The energy rating is 1.13 mJ, suitable for handling common energy loads in switching cycles.
This IGBT is suitable for applications in industrial power electronics, manufacturing automation, motor drives, and HVAC systems.
Key features include a maximum power dissipation of 200 W, a low saturation voltage of 1.8 V, and high-speed switching capability up to 30 kHz.
No, this IGBT is not certified for automotive standards.
Related Products
$26.82
$26.02
-3%
New
$4.19
$4.06
-3%
New
Other Products from this brand
Recently Viewed Products
$1.80
$1.74
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent