$1.93
$1.87
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi UniFET N-Channel MOSFET 33 A 250 V Enhancement Mode 3-Pin TO-220AB FDP33N25
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.67mm |
| Model | FDP33N25 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 0.094Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 235W |
| Typical Gate Charge Qg @ Vgs | 36.8nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Maximum continuous drain current of 33 amperes for demanding power applications.
- Maximum drain-source voltage of 250 volts enables operation in high voltage circuits.
- Low drain-source resistance of 0.094 ohms offers high efficiency and low power loss.
- Typical gate charge of 36.8 nanocoulombs at Vgs provides superior switching performance.
- Operates at temperatures from -55°C to 150°C for industrial reliability.
- Maximum power dissipation rating of 235 watts for robust thermal handling.
- Internal gate-source ESD diode capable of withstanding over 2000V Human Body Model surge stress.
- Ideal for power converter applications including power factor correction and electronic lamp ballasts.
Product Description
onsemi FDP33N25 UniFET N-Channel MOSFET is a high voltage power transistor designed for demanding electronic and industrial applications. This 3-Pin TO-220AB package enhancement mode MOSFET supports a maximum continuous drain current of 33 amperes with a drain-source voltage rating of 250 volts, making it particularly suitable for circuits requiring high voltage and current handling.
The device features a low maximum drain-source resistance of 0.094 Ω, minimizing conduction losses and enhancing energy efficiency. Its typical gate charge of 36.8 nC at standard gate drive voltage ensures superior switching performance and fast operation, critical for modern power electronics.
Operating reliably within a wide temperature range from -55°C to 150°C, this MOSFET meets industrial-grade thermal requirements. It is capable of dissipating up to 235 watts of power, supporting high power density designs.
The internal gate-source ESD diode allows the MOSFET to withstand electrostatic discharge events exceeding 2000 volts (Human Body Model), enhancing device robustness and longevity. Its compact physical dimensions provide ease of integration into through-hole mounted electronic assemblies.
Typical applications for the onsemi FDP33N25 include switching power converters, power factor correction circuits, flat panel display TV power supplies, ATX power supplies, and electronic lamp ballasts. Its UniFET technology ensures the smallest on-state resistance among planar MOSFETs, offering enhanced efficiency and switching speed.
Maximum continuous drain current of 33A. 250V maximum drain-source voltage. Low Rds(on) of 0.094Ω. Maximum power dissipation of 235W. Operating temperature range from -55°C to 150°C. 3-Pin TO-220AB package with through-hole mount type.
Typical gate charge of 36.8nC. Internal high voltage ESD diode protection. Compact dimensions (10.67 x 4.83 x 9.4 mm).
This product is manufactured in Malaysia and is offered new with guaranteed quality standards. It is well suited for industrial, manufacturing, construction, and power management use cases.
Explore more on MOSFET and semiconductor components at EnvMart for enhanced efficiency and reliability in your electronic designs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 33 amperes, making it suitable for demanding power applications.
This MOSFET has a maximum drain-source voltage rating of 250 volts, enabling operation in high voltage circuits.
It features a low maximum drain-source resistance of 0.094 ohms, which helps minimize conduction losses and enhance energy efficiency.
The typical gate charge at Vgs is 36.8 nanocoulombs, providing superior switching performance.
It operates reliably within a temperature range from -55°C to 150°C, suitable for industrial applications.
The maximum power dissipation rating for this unit is 235 watts, supporting high power density designs.
This model comes in a 3-Pin TO-220AB package, designed for through-hole mounting.
The forward voltage of this unit is 1.4 volts.
It features an N-channel design, which is typical for enhancement mode MOSFETs.
Typical applications include switching power converters, power factor correction circuits, and electronic lamp ballasts.
It includes an internal gate-source ESD diode capable of withstanding over 2000V Human Body Model surge stress, enhancing device robustness.
The dimensions of this MOSFET are 10.67 mm in length, 4.83 mm in width, and 9.4 mm in height.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
$6.86
$6.66
-3%
New
$0.97
$0.94
-3%
New
$0.06
$0.06
-3%
New
Recently Viewed Products
$1.93
$1.87
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent