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onsemi QFET Type P-Channel MOSFET 33A 100V Enhancement Mode 3-Pin TO-263 FQB34P10TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FQB34P10TM |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 85nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
| P-Channel MOSFET, 31 A, 55 V, 3-Pin D2PAK Infineon IRF5305SPBFBrand | Infineon |
Key Features
- This MOSFET features an enhancement mode operation for efficient switching.
- It has a maximum drain-source resistance of 60 milliohms ensuring low conduction losses.
- Designed to dissipate up to 3.75 watts of power, suitable for various power applications.
- Operates reliably between -55°C to 175°C, supporting a wide thermal range.
- Typical gate charge is 85 nanocoulombs at Vgs, enabling fast switching performance.
- Gate-source voltage ratings range from -25V to +25V for robust control.
- Compact dimensions of 10.67mm length, 9.65mm width, and 4.83mm height in TO-263 package.
- This device is ideal for electronic components and power management in semiconductor applications.
Product Description
onsemi FQB34P10TM is a QFET Type P-Channel MOSFET designed for electronic power control with a 33 amp maximum continuous drain current and 100 volt maximum drain-source voltage. This enhancement mode device comes in a surface mount 3-pin TO-263 package with low on-resistance of 60 milliohms, enabling efficient power dissipation up to 3.75 watts. It offers a broad operating temperature range from -55°C to 175°C, making it suited for demanding industrial and commercial applications.
The typical gate charge of 85 nanocoulombs and gate-source voltage tolerance from -25 volts to +25 volts support fast and robust switching functions. The compact TO-263 package dimensions of 10.67mm length, 9.65mm width, and 4.83mm height aid in space-constrained PCB designs. Primarily used in semiconductor discrete components, this MOSFET serves in power management, industrial control, and electronic circuits requiring reliable switching performance.
Its design supports applications in automotive, industrial, and electronic manufacturing sectors where quality, reliability, and safety standards are critical. onsemi provides this MOSFET as a new, compliant component without automotive-specific standards, ensuring versatility across numerous environments.
This MOSFET features an enhancement mode operation for efficient switching. It has a maximum drain-source resistance of 60 milliohms ensuring low conduction losses. Designed to dissipate up to 3.75 watts of power, suitable for various power applications.
Operates reliably between -55°C to 175°C, supporting a wide thermal range. Typical gate charge is 85 nanocoulombs at Vgs, enabling fast switching performance. Gate-source voltage ratings range from -25V to +25V for robust control.
Compact dimensions of 10.67mm length, 9.65mm width, and 4.83mm height in TO-263 package. This device is ideal for electronic components and power management in semiconductor applications. Explore more semiconductor discrete components and advanced MOSFETs from onsemi at EnvMart for reliable industrial and electronic solutions.
Explore more products in our Discrete Semiconductor category.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 33A.
The maximum drain-source voltage of the FQB34P10TM is 100V.
This P-Channel MOSFET has a maximum drain-source resistance of 60 milliohms.
The typical gate charge for this model is 85 nanocoulombs at Vgs.
The operating temperature range for the FQB34P10TM is from -55°C to 175°C.
The dimensions of the TO-263 package are 10.67mm in length, 9.65mm in width, and 4.83mm in height.
The maximum power dissipation for this MOSFET is 3.75 watts.
The gate-source voltage tolerance for this device ranges from -25V to +25V.
This MOSFET uses a surface mount type.
The FQB34P10TM can be used in power management, industrial control, and electronic circuits requiring reliable switching performance.
The channel type of this MOSFET is P-Channel.
The FQB34P10TM is manufactured in India.
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