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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Model | ZTX951 |
| Mount Type | Through Hole |
| Series | ZTX9X |
| Maximum Operating Temperature | 150°C |
| Package Type | E-Line |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -60V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 1.2W |
| Maximum DC Collector Current Idc | -4A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 120MHz |
DiodesZetex ZTX951 is a PNP bipolar transistor engineered for high-performance electronic applications. It supports a maximum DC collector current of -4 A and can withstand collector emitter voltages up to -60 V.
This transistor comes in a 3-pin E-Line package designed for through-hole mounting, providing straightforward integration into printed circuit boards. With a power dissipation rating of 1.2 W, it reliably handles considerable power loads, making it suitable for various industrial and electronic equipment.
The device features a minimum DC current gain of 10, enabling effective signal amplification and switching duties in circuits. Its high transition frequency of 120 MHz ensures compatibility with high-frequency operations required in communication and signal processing systems.
Operating temperature ranges from -55°C to 150°C make the ZTX951 highly adaptable to harsh and demanding environments such as industrial and automotive uses. This single PNP transistor supports a maximum collector base voltage of 100 V and emitter base voltage of 6 V, enhancing safety margins in electronic design.
The device does not carry specific automotive standards or additional certifications but is well suited for general-purpose use in electronics manufacturing, power control, and signal amplification.
This transistor features a power dissipation capacity of 1.2 W for reliable performance. Designed for through-hole mount applications ensuring ease of installation. Offers a minimum DC current gain (hFE) of 10 for efficient signal amplification.
Operational frequency reaches up to 120 MHz, suitable for high-frequency circuits. Wide operating temperature range from -55°C to 150°C supports diverse environments. Configured as a single transistor with PNP polarity type.
Supports maximum collector base voltage of 100 V and emitter base voltage of 6 V. Features a robust 3 pin count in the E-Line package form factor. Explore our extensive portfolio of Bipolar Transistors and related semiconductor components for industrial, commercial, and laboratory applications on EnvMart.
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