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DiodesZetex Dual NPN + PNP Transistor 30 V, 1.5 A, 1.7 W Power Dissipation, 6-Pin SOT-23 Package ZXTC2045E6TA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 0.8mm
Length 3.1mm
Model ZXTC2045E6TA
Width 3mm
Mount Type Surface
Series ZXTCX
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 180
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 40V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.7W
Maximum DC Collector Current Idc 1.5A
Transistor Configuration Isolated
Maximum Transition Frequency ft 265MHz

Key Features

  • Supplied in a compact 6-pin SOT-23 surface mount package.
  • Maximum power dissipation rating of 1.7 watts ensuring reliable performance.
  • Designed for isolated transistor configuration with high gain and switching speed.
  • Operating temperature range from -55°C to 150°C for versatile usage.
  • AEC-Q101 automotive standard qualified for demanding industrial applications.
  • Maximum transition frequency of 265 MHz suitable for high-frequency circuits.
  • Pin count of 6 supporting dual transistor functionality in a single package.
  • Provides both NPN and PNP transistor polarities within the same unit.

Product Description

DiodesZetex ZXTC2045E6TA is a dual NPN + PNP bipolar transistor designed for surface mount applications. Rated at a maximum collector current of 1.5 A and collector-emitter voltage of 30 V, this transistor delivers efficient switching and amplification capabilities in compact electronic circuits.

Featuring a low-profile 6-pin SOT-23 package measuring 3.1 mm in length, 3.0 mm in width, and 0.8 mm in height, the device integrates both NPN and PNP transistor polarities, simplifying circuit design and reducing component count.

This transistor offers a maximum power dissipation of 1.7 W and operates reliably between -55°C and 150°C, meeting AEC-Q101 automotive standard requirements. Its maximum transition frequency of 265 MHz ensures suitability for high-frequency signal processing and amplification tasks.

The ZXTC2045E6TA's isolated transistor configuration and high minimum DC current gain of 180 make it ideal for various industrial and electronic applications including automotive electronics, power management, signal amplification, and switching functions in commercial and industrial electronic devices.

Supplied in compact 6-pin SOT-23 package for surface mounting. Dual NPN + PNP transistor polarities integrated in one device. Maximum collector current of 1.5 A and voltage rating of 30 V. Power dissipation of 1.7 W supports robust operation.

Wide operating temperature range from -55°C to 150°C. Automotive standard AEC-Q101 compliant ensuring high reliability. Maximum transition frequency of 265 MHz for high-speed applications. Dimensions suitable for compact electronic designs.

This transistor is suited for industrial, automotive, electronics manufacturing, and power management applications. Explore EnvMart's extensive range of Bipolar Transistors and semiconductor devices for reliable circuit solutions.

DiodesZetex Dual NPN + PNP Transistor 30 V, 1.5 A, 1.7 W Power Dissipation, 6-Pin SOT-23 Package ZXTC2045E6TA
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Frequently Asked Questions

The maximum collector current for the ZXTC2045E6TA is 1.5 A.

It has a maximum power dissipation rating of 1.7 W.

The operating temperature range is from -55°C to 150°C.

This model is supplied in a compact 6-pin SOT-23 surface mount package.

The maximum transition frequency is 265 MHz, making it suitable for high-frequency applications.

The dimensions of the SOT-23 package are 3.1 mm in length, 3.0 mm in width, and 0.8 mm in height.

It is compliant with the AEC-Q101 automotive standard, ensuring reliability for automotive applications.

This unit integrates both NPN and PNP transistor polarities within the same package.

The minimum DC current gain (hFE) is 180.

The maximum collector-emitter voltage rating is 30 V.

It features an isolated transistor configuration, which allows for high gain and switching speed.

This transistor is suited for various applications including automotive electronics, power management, and signal amplification.

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