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| Country of Origin | India |
|---|---|
| Diameter | 3.1mm |
| Brand | ams OSRAM |
| Height | 5.2mm |
| Length | 4mm |
| Model | SFH 309 FA-5/6 |
| Width | 4mm |
| Mount Type | Through Hole |
| Series | SFH 309 FA |
| Maximum Operating Temperature | 100°C |
| Package Type | 3 mm (T-1) |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 7μs |
| Peak Wavelength | 900nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 24 ° |
| Collector Current | 15mA |
| Maximum Light Current | 11200μA |
| Maximum Dark Current | 200nA |
| Collector Emitter Voltage | 35V |
ams OSRAM SFH 309 FA-5/6 Infrared Phototransistor is engineered for industrial-grade applications requiring reliable infrared light sensing. Housed in a standard 3 mm (T-1) through-hole package, it offers a fast response time of 7 microseconds for both rise and fall times, ensuring swift signal handling in photointerrupters and optical control circuits.
This NPN silicon phototransistor detects infrared light with a peak sensitivity at 900 nm wavelength, making it optimal for IR sensing tasks. It supports a collector emitter voltage of up to 35 V and can handle collector currents up to 15 mA, suitable for a broad range of electronic designs.
Operating within an ambient temperature range from -40°C to 100°C, it provides robust performance in harsh industrial environments. The device’s narrow 24° angle of half sensitivity improves directional detection accuracy.
Measuring approximately 3.1 mm in diameter and 5.2 mm tall, it fits compact PCB layouts where space is constrained. The device benefits from RoHS compliance, supporting eco-friendly manufacturing standards.
Typical applications include photointerrupters, industrial electronics, optical controls, and drive circuits, where precise infrared detection and fast response are critical. The phototransistor detects infrared light with a peak wavelength of 900 nm.
This device has a fast typical rise and fall time of 7 microseconds each. It features a collector emitter voltage rating of 35 V and collector current of 15 mA. The device operates reliably within -40°C to 100°C temperature range.
Designed with a compact 3 mm diameter T-1 package and 2-pin through-hole mount. It has a narrow angle of half sensitivity at 24 degrees for precise IR detection. The maximum light current is 11,200 μA while maximum dark current is 200 nA.
Comes RoHS compliant ensuring environmental safety. Suitable for photointerrupters, industrial electronics, and control circuits. The compact dimensions are approx. 5.2 mm height, 4 mm width, and 4 mm length. Explore our extensive range of Phototransistors and electronic components for your industrial, automation, and electronics manufacturing needs at EnvMart.
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