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STMicroelectronics High-Voltage N-Channel MOSFET, 36 A, 600 V, Surface Mount, 7-Pin HU3PAK Package STHU47N60DM6AG

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Model STHU47N60DM6AG
Mount Type Surface
Series STHU47
Maximum Operating Temperature 150°C
Package Type HU3PAK
Minimum Operating Temperature -55°C
Pin Count 7
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 36A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 80mΩ
Maximum Power Dissipation Pd 250W
Typical Gate Charge Qg @ Vgs 55nC
Maximum Gate Source Voltage Vgs 25V
Forward Voltage Vf 1.6V

Key Features

  • High-voltage N-channel MOSFET with 36 A continuous drain current.
  • Supports maximum drain-source voltage of 600 V for demanding applications.
  • 7-pin HU3PAK surface mount package for compact PCB integration.
  • Maximum power dissipation of 250 W ensures robust operation.
  • Low on-resistance of 80 mΩ reduces conduction losses.
  • Fast-recovery body diode improves switching performance.
  • Wide operating temperature range from -55°C to 150°C.
  • Typical gate charge of 55 nC minimizes switching losses.

Product Description

STMicroelectronics STHU47N60DM6AG is a high-performance N-channel MOSFET specifically engineered for high-voltage and high-efficiency power applications. With a maximum drain current of 36 A and a maximum drain-source voltage of 600 V, it is suitable for demanding industrial, automotive, and power management systems.

This MOSFET is housed in a 7-pin HU3PAK surface mount package, offering compact size and ease of installation on PCBs. The typical gate charge of 55 nC and low on-resistance of 80 mΩ contribute to exceptional switching efficiency and lower power dissipation, supporting high-frequency switching operations.

Equipped with a fast-recovery body diode, the device enables improved operation in synchronous rectifiers and zero voltage switching (ZVS) topologies. It carries the rigorous automotive AEC-Q101 certification, confirming its suitability for automotive environments and systems requiring stringent quality and reliability standards.

The operating temperature range from -55°C to 150°C with robust maximum power dissipation up to 250 W allows this component to operate reliably under extreme thermal conditions found in industrial and automotive sectors. Maximum gate-source voltage of 25 V ensures safe handling of gate drive voltages.

The device is ideal for power converters, motor drives, bridge topology circuits, and automotive power supplies. It provides efficient performance in industrial, laboratory, automotive, and manufacturing applications. Its robust electrical characteristics support long-term durability in harsh environments.

Set contains the single MOSFET device in HU3PAK 7-pin package ready for mounting. Choose STMicroelectronics STHU47N60DM6AG for your design needs of high-voltage, high-efficiency, and high-reliability N-channel power MOSFET applications.

Explore more MOSFET and semiconductor products in our Electronics & Electricals category at EnvMart for comprehensive industrial-grade components.

STMicroelectronics High-Voltage N-Channel MOSFET, 36 A, 600 V, Surface Mount, 7-Pin HU3PAK Package STHU47N60DM6AG
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Frequently Asked Questions

The maximum continuous drain current for this model is 36 A.

This MOSFET supports a maximum drain-source voltage of 600 V.

It is housed in a 7-pin HU3PAK surface mount package.

The operating temperature range is from -55°C to 150°C.

The typical gate charge is 55 nC.

The maximum power dissipation is 250 W.

The maximum drain-source resistance is 80 mΩ.

It complies with the AEC-Q101 automotive standard.

This model is suitable for power converters, motor drives, bridge topology circuits, and automotive power supplies.

The maximum gate-source voltage is 25 V.

This model features an N-channel configuration.

The country of origin for this MOSFET is India.

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