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Infineon ISC N-Channel MOSFET, 193 A Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin TDSON-8 FL ISC017N04NM5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 3.8mm |
| Length | 4.4mm |
| Model | ISC017N04NM5ATMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON-8 FL |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 193A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Maximum Power Dissipation Pd | 115W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Supports high continuous drain current of 193 A for demanding applications.
- Operates at a maximum drain source voltage of 40 V.
- Features a compact 8-pin TDSON-8 FL surface mount package.
- Maximum power dissipation of 115 W ensuring robust thermal performance.
- Low on-resistance with Rds(on) of 1.7 mΩ for efficient conduction.
- Wide operating temperature range from -55°C to 175°C for harsh environments.
- Typical gate charge of 67 nC reduces switching losses.
- Maximum gate source voltage rated at 20 V to prevent damage.
Product Description
Infineon ISC017N04NM5ATMA1 is a high-performance N-Channel MOSFET transistor designed for power electronics applications. Featuring a maximum continuous drain current of 193 A and a drain source voltage rating of 40 V, this device supports demanding load conditions with high reliability.
Encapsulated in an 8-pin TDSON-8 FL surface mount package, the MOSFET offers compact dimensions of 4.4 mm length, 3.8 mm height, and 1.1 mm width, allowing integration into dense electronic assemblies. It delivers superior thermal resistance, a maximum power dissipation of 115 W, and a maximum operating junction temperature of 175°C.
The device offers a very low on-resistance (Rds(on)) of 1.7 milliohms, enabling efficient conduction with minimal power loss. Its typical gate charge of 67 nC optimizes switching performance by reducing losses, suitable for high-frequency operations.
Designed for robustness, the product has been 100% avalanche tested and features high threshold voltages for immunity against false turn-on caused by noisy environments. The gate source voltage maximum is rated at 20 V to protect gate integrity.
This MOSFET is RoHS compliant, halogen-free according to IEC61249-2-21, and has a Pb-free lead plating, aligning with environmental regulations.
Typical applications include battery-powered devices, low-voltage motor drives, power management circuits, and switching regulators within industrial, automotive, and electronic manufacturing sectors.
Supports high continuous drain current of 193 A for demanding applications. Operates at a maximum drain source voltage of 40 V. Features a compact 8-pin TDSON-8 FL surface mount package. Maximum power dissipation of 115 W ensuring robust thermal performance.
Low on-resistance with Rds(on) of 1.7 mΩ for efficient conduction. Wide operating temperature range from -55°C to 175°C for harsh environments. Typical gate charge of 67 nC reduces switching losses. Maximum gate source voltage rated at 20 V to prevent damage.
100% avalanche tested for reliable robustness during transient conditions. Halogen-free and RoHS compliant with Pb-free lead plating for environmental safety. Explore a broad range of MOSFET components and power semiconductors for your industrial and electronic projects on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 193 A, making it suitable for demanding applications.
This MOSFET operates at a maximum drain source voltage of 40 V.
It features an 8-pin TDSON-8 FL surface mount package, allowing for compact integration into electronic assemblies.
The on-resistance (Rds(on)) is 1.7 mΩ, which enables efficient conduction with minimal power loss.
The device operates within a wide temperature range from -55°C to 175°C, suitable for harsh environments.
It has a typical gate charge of 67 nC, which helps reduce switching losses.
This model has a maximum power dissipation of 115 W, ensuring robust thermal performance.
The maximum gate source voltage is rated at 20 V to prevent damage to the gate.
Yes, the device is RoHS compliant and features halogen-free lead plating, aligning with environmental regulations.
The dimensions are 4.4 mm in length, 3.8 mm in height, and 1.1 mm in width.
Typical applications include battery-powered devices, low-voltage motor drives, power management circuits, and switching regulators.
The country of origin for this model is India.
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