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Taiwan Semiconductor 600 V 1 A Surface Mount Switching Rectifier Diode DO-214AC ES1J R2

Specifications

Country of Origin China
Brand Taiwan Semiconductor
Height 2.3mm
Length 4.6mm
Model ES1J R2
Width 2.83mm
Mount Type Surface
Series ES1J
Maximum Operating Temperature 150°C
Package Type DO-214AC
Minimum Operating Temperature -55°C
Pin Count 2
Maximum Continuous Forward Current If 1A
Peak Reverse Repetitive Voltage Vrrm 600V
Diode Configuration Single
Rectifier Type Switching
Peak Reverse Current Ir 5μA
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.7V
Peak Reverse Recovery Time trr 35ns
Controlled avalanche Rectifier,BYV99Brand NXP

Key Features

  • Provides a maximum continuous forward current of 1 ampere.
  • Peak reverse repetitive voltage rated at 600 volts.
  • Single diode configuration designed for switching applications.
  • Compact DO-214AC package type suitable for surface mounting.
  • Maximum forward voltage drop of 1.7 volts ensuring efficient operation.
  • Capable of peak non-repetitive forward surge current of up to 30 amperes.
  • Wide operating temperature range from -55°C to 150°C.
  • Fast peak reverse recovery time of 35 nanoseconds for high-speed switching.

Product Description

Taiwan Semiconductor ES1J R2 is a switching rectifier diode designed for high-performance electronic applications requiring 600 V peak reverse voltage and 1 A continuous forward current ratings. Packaged in a surface mount DO-214AC package, it offers high reliability in compact form factor.

This single diode configuration supports fast switching operations with a peak reverse recovery time of 35 nanoseconds, making it suited for industrial and power electronics circuits.

Key electrical parameters include a maximum forward voltage of 1.7 V and a peak surge current of 30 A, ensuring robust transient handling capability. The diode operates in a wide temperature range from -55°C up to 150°C for dependable performance under harsh environmental conditions.

Its small physical footprint with dimensions of 4.6 mm length, 2.83 mm width, and 2.3 mm height allows for efficient PCB layout. The product is manufactured in China and maintained in new condition.

Maximum continuous forward current of 1 A. Peak reverse repetitive voltage of 600 V. Surface mount DO-214AC compact package. Single diode configuration ideal for switching circuits. Maximum forward voltage drop of 1.7 V.

High surge current rating for handling peak loads. Wide operating temperature from -55°C to 150°C. Fast peak reverse recovery time of 35 ns. Compact dimensions suitable for dense electronics assemblies. Manufactured in China and supplied new.

This diode is suitable for applications in industrial electronics, power management systems, telecommunications, and electronic assemblies requiring efficient rectification and switching capabilities. It ensures reliable switching performance in demanding environments.

Explore EnvMart’s extensive selection of discrete semiconductors and power components for your electronic design and manufacturing needs.

Explore more products in our Schottky Diodes & Rectifiers category.

Taiwan Semiconductor 600 V 1 A Surface Mount Switching Rectifier Diode DO-214AC ES1J R2
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Frequently Asked Questions

The maximum continuous forward current of this diode is 1 ampere.

This model has a peak reverse repetitive voltage rating of 600 volts.

It is packaged in a DO-214AC surface mount type, which is compact and suitable for dense electronics assemblies.

The maximum forward voltage drop is 1.7 volts, ensuring efficient operation.

This diode can handle a peak non-repetitive forward surge current of up to 30 amperes.

It operates within a wide temperature range from -55°C to 150°C.

The peak reverse recovery time is 35 nanoseconds, which supports high-speed switching applications.

The diode has dimensions of 4.6 mm in length, 2.83 mm in width, and 2.3 mm in height.

This model features a single diode configuration, making it suitable for various switching applications.

It is suitable for applications in industrial electronics, power management systems, telecommunications, and electronic assemblies requiring efficient rectification and switching capabilities.

The peak reverse current is rated at 5 microamperes (5μA).

This diode is manufactured in China.

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