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Taiwan Semiconductor 20 V 1 A Schottky Barrier Rectifier Diode DO-41 Through Hole 1N5817

Specifications

Country of Origin India
Diameter 2.7mm
Brand Taiwan Semiconductor
Height 2.7mm
Length 5.2mm
Model 1N5817
Width 2.7mm
Mount Type Through Hole
Series 1N581x
Maximum Operating Temperature 125°C
Package Type DO-41
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Continuous Forward Current If 1A
Peak Reverse Repetitive Voltage Vrrm 20V
Diode Configuration Single
Rectifier Type Rectifier Diode
Peak Reverse Current Ir 1mA
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 750mV
onsemi 20 V 1 A Diode Schottky 2-Pin DO-41 1N5817RLGBrand onsemi

Key Features

  • Schottky barrier technology ensures low forward voltage drop and high efficiency.
  • Maximum continuous forward current of 1 ampere supports low power loss applications.
  • Peak reverse repetitive voltage rated at 20 volts for robust protection.
  • Package type DO-41 with through hole mount for easy PCB integration.
  • Operating temperature range from -65°C to 125°C for extended reliability.
  • Peak non-repetitive forward surge current of 30 A for transient handling.
  • Low peak reverse current of 1 mA minimizes leakage losses.
  • Single diode configuration with 2 pins simplifies circuit design.

Product Description

Taiwan Semiconductor 1N5817 is a Schottky Barrier Rectifier Diode designed for efficient power switching and low power loss in electronic circuits. It features a maximum continuous forward current of 1 A and a peak reverse repetitive voltage of 20 V, making it suitable for low voltage rectification tasks in industrial electronics.

This diode is housed in a DO-41 through-hole package with compact dimensions (5.2 mm length and 2.7 mm diameter), enabling reliable mounting on printed circuit boards. It operates over a wide temperature range from -65°C to 125°C ensuring performance stability in harsh environments.

The 1N5817 diode supports a peak non-repetitive forward surge current of 30 A, providing protection against transient current spikes. With a low forward voltage drop of 750 mV and peak reverse current of just 1 mA, it offers energy-efficient rectification ideal for power supplies, switching regulators, and freewheeling diodes in various industrial and manufacturing applications.

Although this model does not comply with specific automotive standards, it is widely employed in consumer electronics, laboratory equipment, and general-purpose power conversion equipment.

Schottky barrier technology ensures low forward voltage drop and high efficiency. Maximum continuous forward current of 1 ampere supports low power loss applications. Peak reverse repetitive voltage rated at 20 volts for robust protection.

Package type DO-41 with through hole mount for easy PCB integration. Operating temperature range from -65°C to 125°C for extended reliability. Compact dimensions: length 5.2 mm, diameter and width 2.7 mm. Peak non-repetitive forward surge current of 30 A for transient handling.

Low peak reverse current of 1 mA minimizes leakage losses. Single diode configuration with 2 pins simplifies circuit design. Suitable for industrial electronics, laboratory, manufacturing, and power supply applications. Explore the Electronics & Electricals Semiconductor Schottky Diodes & Rectifiers category on EnvMart for more products like the Taiwan Semiconductor 1N5817 Diode Rectifier.

Explore more products in our Schottky Diodes & Rectifiers category.

Taiwan Semiconductor 20 V 1 A Schottky Barrier Rectifier Diode DO-41 Through Hole 1N5817
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