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Taiwan Semiconductor 40 V 1 A Through Hole Schottky Barrier Rectifier Diode DO-41 Package 1N5819

Specifications

Country of Origin India
Diameter 2.7mm
Brand Taiwan Semiconductor
Height 2.7mm
Length 5.2mm
Model 1N5819
Width 2.7mm
Mount Type Through Hole
Series 1N581x
Maximum Operating Temperature 125°C
Package Type DO-41
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Continuous Forward Current If 1A
Peak Reverse Repetitive Voltage Vrrm 40V
Diode Configuration Single
Rectifier Type Rectifier Diode
Peak Reverse Current Ir 1mA
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 900mV

Key Features

  • This diode is designed for low power loss applications with a low forward voltage drop.
  • It supports a maximum continuous forward current of 1 A and a peak non-repetitive forward surge current of 30 A.
  • The package type is DO-41 with dimensions approximately 5.2 mm length and 2.7 mm diameter.
  • Operating temperature range is from -65°C to 125°C ensuring reliable performance in extreme conditions.
  • Features a peak reverse repetitive voltage of 40 V and a maximum forward voltage of 900 mV.
  • Single diode configuration with 2-pin construction suitable for various electronic circuits.
  • High current capability makes it ideal for power rectification in electronic devices.
  • Designed without standards or automotive certification.

Product Description

Taiwan Semiconductor 1N5819 Schottky Barrier Rectifier Diode is a discrete semiconductor device suitable for use in electronic and electrical applications that require efficient rectification with low forward voltage loss.

This diode comes in a DO-41 package which supports through hole mounting, providing an easy integration into various circuit designs. With a maximum continuous forward current rating of 1 A and peak surge current capability of 30 A, it is able to handle transient high current demands efficiently.

The diode’s peak reverse repetitive voltage rating of 40 V ensures safe blocking of reverse voltages in circuits, while a low forward voltage drop of 900 mV reduces power dissipation and improves efficiency.

The operating temperature range from -65°C up to 125°C makes it suitable for industrial, commercial, and laboratory environments where varying temperature conditions may apply. This diode features a two-pin single diode configuration ideal for rectification purposes.

Its compact dimensions (length 5.2 mm, diameter 2.7 mm) make it suitable for space-constrained circuit layouts. Low power loss and high current capability support its use in power supplies and converters. Absence of automotive and other certifications indicates usage primarily in general electronics rather than automotive sectors.

The product is labeled as new and made with reliable semiconductor manufacturing standards in Taiwan.

This Taiwan Semiconductor 1N5819 diode is extensively used in electronic components, power semiconductor applications, and discrete semiconductor assemblies in various industries including construction, manufacturing, and HVAC systems.

Explore the Semiconductor category in EnvMart to find complete ranges of Schottky diodes and rectifiers to suit your project needs.

Explore more products in our Schottky Diodes & Rectifiers category.

Taiwan Semiconductor 40 V 1 A Through Hole Schottky Barrier Rectifier Diode DO-41 Package 1N5819
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Frequently Asked Questions

The maximum continuous forward current rating of this diode is 1 A.

The peak reverse repetitive voltage for the 1N5819 is rated at 40 V.

The DO-41 package has dimensions of approximately 5.2 mm in length and 2.7 mm in diameter.

The operating temperature range for this diode is from -65°C to 125°C.

The maximum forward voltage drop of the 1N5819 is 900 mV.

This diode can handle a peak non-repetitive forward surge current of 30 A.

The 1N5819 diode features a two-pin configuration.

This diode supports through hole mounting, making it suitable for various circuit designs.

The rectifier type of this model is a Schottky rectifier diode.

The peak reverse current rating for this diode is 1 mA.

The 1N5819 is suitable for power rectification in electronic devices and various electrical applications requiring efficient rectification.

This diode belongs to the 1N581x series.

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