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Infineon OptiMOS 5 N-Channel MOSFET 100A 25V Enhancement Mode 8-Pin SuperSO BSC009NE2LS5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin Malaysia
Brand Infineon
Height 1.1mm
Length 5.49mm
Model BSC009NE2LS5ATMA1
Width 6.35mm
Mount Type Surface
Series OptiMOS 5
Maximum Operating Temperature 150°C
Package Type SuperSO
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 25V
Maximum Drain Source Resistance Rds 1.25mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 74W
Typical Gate Charge Qg @ Vgs 43nC
Maximum Gate Source Voltage Vgs 16V
Forward Voltage Vf 1V

Key Features

  • Supports high current applications with 100A maximum continuous drain current.
  • Features low on-resistance of 1.25 milliohms for improved energy efficiency.
  • Compact 8-pin SuperSO surface-mounted package optimizes board space.
  • Handles up to 74W power dissipation and operates between -55°C to 150°C.
  • Typical gate charge of 43nC enables fast switching performance.
  • Low forward voltage of 1V minimizes conduction losses during operation.
  • Maximum gate-source voltage rating is 16V, ensuring robust switching capability.
  • Designed for reliable operation with 100% avalanche testing.

Product Description

Infineon BSC009NE2LS5ATMA1 is an OptiMOS 5 Series N-Channel MOSFET engineered for high-performance power management applications. Offering a maximum continuous drain current of 100A and a drain-source voltage of 25V, this MOSFET combines efficiency and reliability in a compact 8-pin SuperSO package suitable for surface mounting.

Designed with an enhancement mode channel, it provides a low on-resistance of 1.25 milliohms facilitating reduced conduction losses and improved energy efficiency during operation. The device supports a maximum power dissipation of 74W and can operate reliably in a wide temperature range from -55°C to 150°C, allowing use in diverse environmental conditions.

The typical gate charge of 43nC at a gate voltage of 10V enables rapid switching, which is essential for applications requiring high-frequency performance. The device also withstands a maximum gate-source voltage of 16V and features a low forward voltage drop of 1V, lowering power dissipation further.

This MOSFET is 100% avalanche tested to assure robustness and long-term reliability, making it suitable for high-performance buck converters, synchronous rectification circuits, automotive electronics where compact designs are critical, and renewable energy power conversion systems.

Compact SuperSO8 packaging provides efficient thermal management and optimizes PCB space. Infineon's commitment to environmental standards is reflected in this product's RoHS compliance and lead-free solder plating, supporting green manufacturing initiatives.

Supports high current applications with 100A maximum continuous drain current. Features low on-resistance of 1.25 milliohms for improved energy efficiency. Compact 8-pin SuperSO surface-mounted package optimizes board space.

Handles up to 74W power dissipation and operates between -55°C to 150°C. Typical gate charge of 43nC enables fast switching performance. Low forward voltage of 1V minimizes conduction losses during operation. Maximum gate-source voltage rating is 16V, ensuring robust switching capability.

Designed for reliable operation with 100% avalanche testing. Ideal for power management, buck converters, synchronous rectification, automotive, and renewable energy applications. RoHS compliant with Pb-free lead plating for environmental compatibility.

Explore more in our Electronics & Electricals category for advanced semiconductor components and solutions.

Infineon OptiMOS 5 N-Channel MOSFET 100A 25V Enhancement Mode 8-Pin SuperSO BSC009NE2LS5ATMA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 100A.

It operates reliably between -55°C to 150°C.

The maximum drain-source voltage is 25V.

The typical gate charge is 43nC at a gate voltage of 10V.

It features a low on-resistance of 1.25 milliohms.

This device comes in a SuperSO package with 8 pins.

It can handle up to 74W of power dissipation.

The forward voltage drop is 1V.

The maximum gate-source voltage rating is 16V.

This model has an enhancement mode N-channel.

The country of origin for this product is Malaysia.

It is suitable for high-performance power management applications, including buck converters and automotive electronics.

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