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| Country of Origin | Czech Republic |
|---|---|
| Brand | onsemi |
| Height | 30.02mm |
| Length | 10.53mm |
| Model | MJE15030G |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | MJE15030 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 150V |
| Minimum DC Current Gain hFE | 20 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 150V |
| Maximum Power Dissipation Pd | 50W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
onsemi MJE15030G is a high-performance NPN bipolar power transistor constructed in a TO-220 3-pin through-hole package. It supports a maximum collector current of 8 amps and can withstand collector emitter voltage up to 150 volts, making it suitable for medium power electronic applications.
This transistor offers a maximum power dissipation of 50 watts which assists in efficient operation while maintaining thermal stability. Designed with a single transistor configuration and NPN polarity, it features a minimum DC current gain of 20, enabling superior amplification capabilities.
With a maximum transition frequency of 30 MHz, the MJE15030G transistor is ideal for high-frequency drivers such as audio amplifiers. Its operating temperature range spans from -65 degrees Celsius to 150 degrees Celsius, ensuring reliable performance under diverse environmental conditions.
The device measures approximately 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width, housed in an industry-standard TO-220 package for through-hole mounting on PCBs. This makes it well suited for use in various industrial, audio, and power supply applications including construction electronics, manufacturing controls, and general industrial use.
Manufactured in the Czech Republic, the transistor complies with relevant semiconductor standards but does not carry automotive standard certification. The MJE15030G is a robust choice for engineers seeking a reliable power transistor with good gain and frequency response characteristics.
Supports maximum collector current of 8 A. Withstands collector emitter voltage of 150 V. Power dissipation up to 50 W ensures thermal efficiency. NPN transistor polarity with minimum DC gain of 20. Operational temperature range from -65 to 150 °C.
High-frequency transition rate up to 30 MHz. Compact TO-220 3-pin package for through-hole mounting. Dimensions: 30.02 mm height, 10.53 mm length, 4.83 mm width. Single bipolar transistor configuration. Country of origin: Czech Republic.
Explore our comprehensive selection of Bipolar Transistors at EnvMart for reliable electronic component sourcing.
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