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onsemi 8 A 150 V NPN Bipolar Power Transistor TO-220 3-Pin MJE15030G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin Czech Republic
Brand onsemi
Height 30.02mm
Length 10.53mm
Model MJE15030G
Width 4.83mm
Mount Type Through Hole
Series MJE15030
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 150V
Minimum DC Current Gain hFE 20
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 150V
Maximum Power Dissipation Pd 50W
Maximum DC Collector Current Idc 8A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • Supports maximum DC collector current of 8 amperes.
  • Maximum collector emitter voltage rating of 150 volts.
  • Maximum power dissipation of 50 watts ensures efficient heat management.
  • Built with NPN transistor polarity and high DC current gain starting from 20.
  • Operates reliably from -65 to 150 degrees Celsius temperature range.
  • Transition frequency up to 30 MHz suitable for audio amplifier drivers.
  • Compact TO-220 package with three through-hole pins for easy mounting.
  • Designed and manufactured in Czech Republic.

Product Description

onsemi MJE15030G is a high-performance NPN bipolar power transistor constructed in a TO-220 3-pin through-hole package. It supports a maximum collector current of 8 amps and can withstand collector emitter voltage up to 150 volts, making it suitable for medium power electronic applications.

This transistor offers a maximum power dissipation of 50 watts which assists in efficient operation while maintaining thermal stability. Designed with a single transistor configuration and NPN polarity, it features a minimum DC current gain of 20, enabling superior amplification capabilities.

With a maximum transition frequency of 30 MHz, the MJE15030G transistor is ideal for high-frequency drivers such as audio amplifiers. Its operating temperature range spans from -65 degrees Celsius to 150 degrees Celsius, ensuring reliable performance under diverse environmental conditions.

The device measures approximately 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width, housed in an industry-standard TO-220 package for through-hole mounting on PCBs. This makes it well suited for use in various industrial, audio, and power supply applications including construction electronics, manufacturing controls, and general industrial use.

Manufactured in the Czech Republic, the transistor complies with relevant semiconductor standards but does not carry automotive standard certification. The MJE15030G is a robust choice for engineers seeking a reliable power transistor with good gain and frequency response characteristics.

Supports maximum collector current of 8 A. Withstands collector emitter voltage of 150 V. Power dissipation up to 50 W ensures thermal efficiency. NPN transistor polarity with minimum DC gain of 20. Operational temperature range from -65 to 150 °C.

High-frequency transition rate up to 30 MHz. Compact TO-220 3-pin package for through-hole mounting. Dimensions: 30.02 mm height, 10.53 mm length, 4.83 mm width. Single bipolar transistor configuration. Country of origin: Czech Republic.

Explore our comprehensive selection of Bipolar Transistors at EnvMart for reliable electronic component sourcing.

onsemi 8 A 150 V NPN Bipolar Power Transistor TO-220 3-Pin MJE15030G
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Frequently Asked Questions

The MJE15030G transistor supports a maximum DC collector current of 8 amperes.

It can withstand a maximum collector-emitter voltage of 150 volts.

The maximum power dissipation is 50 watts, which aids in efficient thermal management.

The operating temperature range spans from -65 degrees Celsius to 150 degrees Celsius.

The MJE15030G has a maximum transition frequency of up to 30 MHz, making it suitable for high-frequency applications.

This model is housed in a compact TO-220 package with three through-hole pins for easy mounting.

It features a minimum DC current gain of 20, providing good amplification capabilities.

The dimensions are approximately 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width.

It is designed with a single bipolar transistor configuration and has NPN polarity.

The maximum emitter-base voltage is 5 volts.

This transistor does not carry automotive standard certification, limiting its suitability for such applications.

It is manufactured in the Czech Republic.

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