onsemi N-Channel MOSFET 200 mA 50 V Enhancement Type 3-Pin SOT-23 BSS138LT1G

onsemi BSS138LT1G is an N-Channel MOSFET designed for low power switching and amplification applications. It features a maximum continuous drain current of 200 mA and can withstand up to 50 V drain-source voltage, making it suitable for a wide range of electronic circuits where compact size and reliable performance are essential.

The device uses an enhancement channel mode and comes in a 3-pin SOT-23 surface mount package, promoting easy integration into modern compact printed circuit boards. Its low forward voltage of 1.2 V helps reduce power dissipation during operation. The transistor supports a typical gate charge of 160 nC at gate-source voltage, facilitating fast switching actions.

Operating temperature ranges from -55°C to 150°C allow this MOSFET to perform reliably under harsh environmental conditions such as industrial, automotive, and consumer electronics applications. Its 3.5 Ω maximum drain-source resistance ensures efficient current flow with minimal losses.

The compact dimensions of 2.9 mm length, 1.3 mm width, and 940 μm height make the BSS138LT1G ideal for space-constrained designs, including laptops, portable devices, and communication equipment. The wide gate-source voltage tolerance of ±20 V offers flexibility in control signal implementation.

This MOSFET is typically used in switching regulators, signal amplification, load switching, and logic level interfaces across various industrial and commercial applications. The MOSFET features an enhancement channel mode for efficient switching applications.

Maximum continuous drain current is rated at 200 mA for stable operation. Maximum power dissipation rating is 225 mW, suitable for low-power electronics. Forward voltage drop is 1.2 V, minimizing power loss. Operating temperature range extends from -55°C to 150°C, ensuring reliability in various environments.

Typical gate charge at Vgs is 160 nC, ideal for fast switching. Package type is SOT-23 with surface mount for compact PCB layouts. Maximum gate-source voltage is ±20 V, supporting safe gate drive levels. The transistor has a maximum drain-source resistance of 3.5 Ω.

Dimension specifications are 2.9 mm length, 1.3 mm width, and 940 μm height. Explore additional onsemi semiconductor products on EnvMart to meet your industrial and commercial electronic component needs.

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