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onsemi PNP Transistor 3-Pin SOT-23, 200 mA Collector Current, 40 V Collector-Emitter Voltage, 300 mW Power MMBT3906LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBT3906LT1G
Width 1.4mm
Mount Type Surface
Series MMBT3906L
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 40V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -200mA
Transistor Configuration Single
Maximum Transition Frequency ft 250MHz
PNP transistor,MMBT3906 0.2ABrand ON Semiconductor

Key Features

  • Compact SOT-23 surface mount package suitable for space-limited designs.
  • Maximum power dissipation of 300 mW for efficient circuit operation.
  • Minimum DC current gain (hFE) of 30 ensures reliable amplification.
  • Maximum transition frequency of 250 MHz supports high-frequency applications.
  • Automotive qualified to AEC-Q101 standard ensuring high reliability.
  • Operating temperature up to 150°C suitable for demanding environments.
  • Designed for general-purpose PNP transistor applications in electronic circuits.
  • 3-pin layout enables easy integration in surface-mount PCB designs.

Product Description

onsemi MMBT3906LT1G is a general-purpose PNP bipolar junction transistor in a compact 3-pin SOT-23 surface-mount package. It supports a maximum DC collector current of 200 mA and a maximum collector-emitter voltage of 40 V, making it suitable for low power switching and amplification tasks in electronic circuits.

The transistor features a maximum power dissipation of 300 mW, enabling efficient operation without excessive heat generation in typical applications. It has a minimum DC current gain (hFE) of 30 and a maximum transition frequency of 250 MHz, allowing it to handle moderate frequency signals effectively.

This device meets the automotive AEC-Q101 qualification standard, providing enhanced robustness and reliability for automotive and industrial electronics. Its operating temperature extends up to 150°C, making it viable for use in harsh or elevated temperature environments.

The SOT-23 package has dimensions of approximately 3.04 mm length, 1.4 mm width, and 1.11 mm height, offering compactness for dense PCB layouts.

Applications include general-purpose amplification, switching, and signal processing tasks in consumer electronics, industrial controls, automotive electronics, and communication devices.

Compact SOT-23 surface mount package for space-saving designs. Reliable PNP transistor with 200 mA collector current capacity. Suitable for general amplification and switching roles. Automotive qualified to AEC-Q101 standard.

Operates reliably up to 150°C ambient temperature. High transition frequency for effective signal handling. Low power dissipation maintaining thermal efficiency. Easy surface-mount integration on PCBs.

Choose onsemi MMBT3906LT1G for dependable bipolar transistor performance in industrial, automotive, and electronics manufacturing applications. Browse further semiconductor components and transistors on EnvMart for complementary parts and full project solutions.

Explore more products in our Bipolar Transistors category.

onsemi PNP Transistor 3-Pin SOT-23, 200 mA Collector Current, 40 V Collector-Emitter Voltage, 300 mW Power MMBT3906LT1G
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Frequently Asked Questions

The maximum collector current for this model is 200 mA.

The maximum collector-emitter voltage for the MMBT3906LT1G is 40 V.

This transistor has a maximum power dissipation rating of 300 mW.

The maximum transition frequency for this model is 250 MHz.

The SOT-23 package has dimensions of approximately 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

This model can operate at temperatures up to 150°C.

Yes, it is qualified to the AEC-Q101 automotive standard, ensuring high reliability.

The minimum DC current gain (hFE) for the MMBT3906LT1G is 30.

It is a PNP bipolar junction transistor.

This model features a 3-pin layout.

The maximum emitter-base voltage (VEBO) for this transistor is 5 V.

It is suitable for general-purpose amplification, switching, and signal processing tasks in various electronic circuits.

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