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onsemi Small Signal PNP Transistor, 100 mA, 65 V, 3-Pin SOT-23 Package BC856BLT1G

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onsemi Small Signal PNP Transistor, 100 mA, 65 V, 3-Pin SOT-23 Package BC856BLT1G

Name: onsemi Small Signal PNP Transistor, 100 mA, 65 V, 3-Pin SOT-23 Package BC856BLT1G
Brand: onsemi
SKU: 196871
Price: 0.06 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	BC856BLT1G
Width	1.4mm
Mount Type	Surface
Series	BC856ALT1G
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-65V
Minimum DC Current Gain hFE	125
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	80V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	-100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
PNP transistor,BC856B 0.1ABrand	ON Semiconductor

Key Features

This single transistor configuration supports PNP polarity.
Maximum power dissipation is 300 mW suitable for low power applications.
Maximum transition frequency is 100 MHz allowing good frequency response.
Operating temperature ranges from -55°C to 150°C for reliability in various environments.
Compact dimensions with length 3.04 mm, width 1.4 mm, and height 1.11 mm facilitate compact PCB design.
Automotive standard AEC-Q101 qualified, ensuring high quality and robustness.
Maximum collector base voltage of 80 V and emitter base voltage of 5 V provide wide operating limits.
Minimum DC current gain of 125 ensures efficient amplification in switching and signal applications.

Product Description

onsemi BC856BLT1G is a small signal PNP transistor designed for general purpose low power amplification and switching tasks. It features a maximum DC collector current of 100 mA and a maximum collector emitter voltage of 65 V, housed in a 3-pin SOT-23 surface mount package that supports compact electronic designs.

The transistor exhibits a maximum power dissipation of 300 mW and a transition frequency up to 100 MHz, suitable for medium frequency analog applications and switching circuits. It operates efficiently between temperatures ranging from -55°C to 150°C, making it suitable for industrial, automotive, and consumer electronics environments.

With a minimum DC current gain (hFE) of 125, this transistor delivers reliable signal amplification while maintaining low noise. The wide maximum collector base voltage (80 V) and maximum emitter base voltage (5 V) enable versatile operating conditions.

The component meets the AEC-Q101 automotive standard, reflecting robust quality and reliability for automotive circuit applications. Its compact physical dimensions of 3.04 mm length, 1.4 mm width, and 1.11 mm height facilitate efficient PCB layout design and space savings in electronic assemblies.

This transistor is ideal for use in industrial control systems, automotive electronics, signal processing circuits, and general discrete semiconductor applications. The surface mount SOT-23 package supports automated high-volume PCB assembly processes.

It is a single transistor device with PNP polarity suitable for complementary use with NPN counterparts in amplifier stages. Consumers and engineers benefit from its balance of power handling, frequency response, and temperature robustness.

Packaging and supply are optimized for both prototypes and mass production volumes.

Explore a wide selection of Bipolar Transistors and other semiconductor components optimized for diverse industrial and commercial applications within the EnvMart electronic components category.