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Vishay N-Channel MOSFET 5.4 A 800 V Enhancement 3-Pin TO-247 IRFPE40PBF

Category Discrete Semiconductor Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 20.7mm
Length 15.87mm
Model IRFPE40PBF
Width 5.31mm
Mount Type Through Hole
Series IRFP
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 5.4A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 2Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 150W
Typical Gate Charge Qg @ Vgs 130nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.8V
N-channel MOSFET,IRFPE40 5.4A 800VBrand Vishay

Key Features

  • Offers low drain-source resistance of 2Ω for efficient conduction.
  • Packaged in a durable TO-247 through-hole mount with 3 pins for reliable installation.
  • Supports a wide operating temperature range from -55°C to 150°C.
  • Maximum power dissipation is 150 W, suitable for high power applications.
  • Compatible with gate-source voltages between -20 V and +20 V.
  • Typical gate charge of 130 nC at specified gate voltage enables fast switching.
  • Forward voltage drop is typically 1.8 V under forward conduction.
  • Robust build with dimensions 5.31 mm width, 15.87 mm length, and 20.7 mm height.

Product Description

The Vishay IRFPE40PBF N-Channel Enhancement Mode MOSFET is engineered to provide superior performance in power switching and amplification tasks in demanding industrial and electronic applications. Featuring a maximum continuous drain current of 5.4 A and a drain-source voltage rating of 800 V, this device meets high-voltage power control requirements reliably.

Packaged in a robust TO-247 through-hole mount with three pins, the MOSFET ensures easy integration into power circuit boards with mechanical stability. Its low drain-source resistance of 2Ω minimizes power loss, enhancing overall circuit efficiency. The device supports a maximum gate-source voltage range of -20 V to +20 V, allowing flexible control voltage schemes.

Designed to operate over a wide ambient temperature range from -55°C to 150°C, the IRFPE40PBF maintains stable operation even in harsh environments. It handles power dissipation of up to 150 W, suitable for medium to high power applications including motor drives, power supplies, and power management circuits.

The typical gate charge of 130 nC at the rated gate voltage ensures rapid switching capability, enhancing performance in PWM and switching applications. The forward voltage drop across the device is approximately 1.8 V, contributing to low conduction losses.

Typical physical dimensions are 5.31 mm width, 15.87 mm length, and 20.7 mm height, consistent with TO-247 packaging standards. Offers low drain-source resistance of 2Ω for efficient conduction. Packaged in a durable TO-247 through-hole mount with 3 pins for reliable installation.

Supports a wide operating temperature range from -55°C to 150°C. Maximum power dissipation is 150 W, suitable for high power applications. Compatible with gate-source voltages between -20 V and +20 V. Typical gate charge of 130 nC at specified gate voltage enables fast switching.

Forward voltage drop is typically 1.8 V under forward conduction. Robust build with dimensions 5.31 mm width, 15.87 mm length, and 20.7 mm height. Engineered for industrial electronics, power management, and control electronics.

Ideal for use in industrial electronics, power management, and semiconductor control systems. For additional technical details and design resources, refer to Vishay's official datasheets and supporting software tools.

Explore more products in our Discrete Semiconductor category.

Vishay N-Channel MOSFET 5.4 A 800 V Enhancement 3-Pin TO-247 IRFPE40PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 5.4 A.

This N-channel MOSFET has a maximum drain-source voltage rating of 800 V.

It can handle a maximum power dissipation of 150 W, making it suitable for medium to high power applications.

The dimensions of the TO-247 package are 5.31 mm in width, 15.87 mm in length, and 20.7 mm in height.

The operating temperature range for this model is from -55°C to 150°C.

The typical gate charge at the specified gate voltage is 130 nC.

The forward voltage drop across this MOSFET is typically 1.8 V under forward conduction.

It has a low drain-source resistance of 2Ω, which helps in efficient conduction.

This model uses a through-hole mount with 3 pins for installation.

The maximum gate-source voltage range for this MOSFET is -20 V to +20 V.

This MOSFET is suitable for use in industrial electronics, power management, and semiconductor control systems.

This model belongs to the IRFP series of MOSFETs.

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